100mA / 50V Digital transistor
(with built-in resistor)
DTC125TUA / DTC125TKA
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input, and parasitic
effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
4) Higher mounting densities can be achieved.
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Package
Packaging type
Part No.
DTC125TUA
DTC125TKA
Code
Basic ordering unit (pieces)
UMT3
Taping
T106
3000
−
SMT3
Taping
T146
3000
−
Dimensions
(Unit : mm)
DTC125TUA
2.0
0.3
(3)
0.9
0.2
0.7
1.25
(2)
(1)
2.1
0.65 0.65
0.1Min.
0.3Min.
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 0A
Each lead has same dimensions
DTC125TKA
2.9
0.4
(3)
1.6
2.8
1.1
0.8
(2)
(1)
0.95 0.95
0.15
ROHM : SMT3
EIAJ : SC-59
1.9
Abbreviated symbol : 0A
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Inner circuit
B
R
1
C
E
E : Emitter
C : Collector
B : Base
R
1
=200kΩ
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c
○
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.C
DTC125TUA / DTC125TKA
Absolute maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
50
50
5
100
200
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
Data Sheet
Electrical characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Input resistance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
Min.
50
50
5
−
−
−
100
140
−
Typ.
−
−
−
−
−
−
250
200
250
Max.
−
−
−
0.5
0.5
0.3
600
260
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
I
C
=
50μA
I
C
=
1mA
I
E
=
50μA
V
CB
=
50V
V
EB
=
4V
I
C
=
0.5mA , I
B
=
0.05mA
I
C
=
1mA , V
CE
=
5V
−
V
CE
=
10V , I
E
=
−5mA
, f
=
100MHz
Conditions
Transition frequency
∗
Characteristics of built-in transistor
Electrical characteristic curves
V
CE
=5V
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1k
500
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
10μ
20μ
50μ 100μ 200μ
500μ 1m
2m
5m
10m
Ta=100°C
I
C
/I
B
=10/1
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
10μ
20μ
50μ 100μ 200μ
500μ 1m
2m
5m
10m
Ta=25°C
Ta=
−40°C
Ta=100°C
Ta=25°C
Ta=
−40°C
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
vs. Collector current
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.06 - Rev.C
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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