KTD1304
Elektronische Bauelemente
0.3 A, 25 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
High emitter-base voltage: V
EBO
=12V(Min)
low on resistance: Ron=0.6Ω(max)(I
B
=1mA)
PACKAGE DIMENSIONS
3
Collector
1
SOT-23
Dim
A
B
C
D
G
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
Base
2
Emitter
A
L
3
H
K
2
J
J
K
C
Top View
1
B S
L
S
V
V
G
D
H
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
STG
Ratings
25
20
12
300
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
I
CBO
I
EBO
h
FE
1 (FORWARD)
h
FE
1 (REVERSE)
V
CE(sat)
V
BE(sat)
fT
C
OB
R
(ON)
Min.
25
20
12
-
-
200
20
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
60
10
0.6
Max.
-
-
-
0.1
0.1
1000
-
0.25
1
-
-
-
Unit
V
V
V
uA
uA
I
C
= 100 uA
I
C
= 1 mA
I
E
= 100 uA
V
CB
= 25 V
V
EB
= 12 V
Test Conditions
V
CE
= 2 V, I
C
=4 mA
V
CE
= 2 V, I
C
=4 mA
V
V
MHz
pF
Ω
I
C
=100 mA, I
B
=10 mA
I
C
=100 mA, I
B
=10 mA
V
CE
= 10 V, I
C
= 1 mA, f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
IN
=0.3 V, I
B
=1mA, f=1KHz
01-June-2005 Rev. A
Page 1 of 2
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