MTD1312T4 datasheet, PDF - EEWORLD Datasheet

MTD1312T4: DescriptionTRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,25A I(D),TO-252AA; CategoryDiscrete semiconductor The transistor; File Size738KB，10 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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MTD1312T4 Overview

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,25A I(D),TO-252AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NXP
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	25 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	72 W
surface mount	YES

	MTD1312T4	MTD1312
Description	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,25A I(D),TO-252AA	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,25A I(D),TO-252AA
Is it Rohs certified?	incompatible	incompatible
Maker	NXP	NXP
Reach Compliance Code	unknown	unknown
Configuration	Single	Single
Maximum drain current (Abs) (ID)	25 A	25 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	72 W	72 W
surface mount	YES	YES

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