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BY251

Description
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size229KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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BY251 Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

BY251 THRU BY255
GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage -
200 to 1300 Volts
DO-201AD
Forward Current -
3.0 Ampere
FEATURES
1.0 (25.4)
MIN.
0.220 (5.6)
0.197(5.0)
DIA.
0.375(9.5)
0.285(7.2)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
BY251
BY252
BY253
BY254
BY255
UNITS
VOLTS
VOLTS
VOLTS
Amps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
200
140
200
400
280
400
600
420
600
3.0
800
560
800
1300
910
1300
I
FSM
V
F
I
R
C
J
R
q
JA
T
J
,
T
STG
150
1.1
10.0
500
30.0
20.0
-65 to +175
Amps
Volts
u
A
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com

BY251 Related Products

BY251 BY252 BY253 BY254 BY255
Description 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1300 V, SILICON, RECTIFIER DIODE, DO-201AD
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