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BDW84D

Description
Bipolar Transistors;PNP;-15A;-120V;TO-3PN
File Size218KB,2 Pages
ManufacturerInchange Semiconductor
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Bipolar Transistors;PNP;-15A;-120V;TO-3PN

BDW84D Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon PNP Darlington Power Transistor
BDW84D
DESCRIPTION
·Collector
Current -I
C
= -
15A
·High
DC Current Gain-h
FE
= 750(Min)@ I
C
= -6A
·Complement
to Type BDW83D
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for general purpose amplifier and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CER
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-120
-120
-5
-15
-0.5
3.5
W
150
150
-65~150
UNIT
V
V
V
A
A
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance,Junction to Ambient
MAX
0.83
35.7
UNIT
℃/W
℃/W
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