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BD136

Description
Bipolar Transistors;PNP;-1.5A;-45V;TO-126
File Size209KB,2 Pages
ManufacturerInchange Semiconductor
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BD136 Overview

Bipolar Transistors;PNP;-1.5A;-45V;TO-126

BD136 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon PNP Power Transistor
DESCRIPTION
·DC
Current Gain-
: h
FE
= 40(Min)@ I
C
= -0.15A
·Collector-Emitter
Sustaining Voltage -
: V
CEO(SUS)
= -45V(Min)
·Complement
to type BD135
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-45
-45
-5
-1.5
-0.5
1.25
W
12.5
150
-55~150
UNIT
V
V
V
A
A
BD136
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
10
100
UNIT
℃/W
℃/W
isc website
www.iscsemi.com
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isc & iscsemi
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