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DF005

Description
1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size253KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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DF005 Overview

1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

DF005 THRU DF10
Reverse Voltage - 50 to 1000 Volts
GLASS PASSIVATED BRIDGE RECTIFIERS
Forward Current - 1.0 Ampere
FEATURES
DF-M
.335(8.5)
.307(7.8)
Plastic package used has Underwriters
Laboratory Flammability Classification 94V-0
Glass passivated chip junction
High surge overload rating of 50 Amperes peak
High temperature soldering guaranteed:
260°C/10 seconds, at 5 lbs. (2.3kg) tension
.031(0.8)
.023(0.6)
.256(6.5)
.244(6.2)
MECHANICAL DATA
.323(8.2)
.315(8.0)
.102(2.6)
.089(2.2)
.350(8.9)
.311(7.9)
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750
Method 2026
Mounting Position: Any
Weight: 0.014 oz., 0.4 g
.079(2.0)
.059(1.5)
.022(0.55)
.018(0.45)
.205(5.2)
.197(5.0)
.193(4.9)
.165(4.2)
1
2
3
4
Dim ensions in inches and (m illim eters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
CHARACTERISTICS
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
@T
A
= 25
o
C
@T
A
= 125 C
o
DF005
50
35
50
DF01
100
70
100
DF02
200
140
200
DF04
400
280
400
1.0
50
1.1
10.0
500
10
25
40
-55 to + 150
DF06
600
420
600
DF08
800
560
800
DF10
1000
700
1000
UNITS
V
V
V
A
A
V
µA
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
o
Maximum Average Forward Output Current at T
A
= 40 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum DC Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance ( Note1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
NOTES : 1.Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
I
R
I
2
t
C
J
R
θJ
A
T
J,
T
STG
A
2
Sec
pF
0
C/W
C
0
2. Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13x13mm) copper pads.

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DF005 DF10 DF01 DF02 DF04 DF06 DF08
Description 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
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