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BAV99

Description
SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size125KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BAV99 Overview

SIGNAL DIODE

BAV99 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-609 codee0
Maximum operating temperature175 °C
Maximum output current0.1 A
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
BAV99 series
High-speed switching diodes
Rev. 07 — 14 April 2010
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
BAV99
BAV99S
BAV99W
SOT23
SOT363
SOT323
JEITA
-
SC-88
SC-70
JEDEC
TO-236AB
-
-
dual series
quadruple; 2 series
dual series
Configuration
Package
configuration
small
very small
very small
Type number
1.2 Features and benefits
High switching speed: t
rr
4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: C
d
1.5 pF
Reverse voltage: V
R
100 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
V
R
= 80 V
Min
-
-
-
Typ
-
-
-
Max
0.5
100
4
Unit
μA
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.

BAV99 Related Products

BAV99 BAV99W BAV99S
Description SIGNAL DIODE 0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.15 A, 100 V, 4 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? incompatible conform to conform to
Reach Compliance Code unknow compli compliant
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.25 V 0.715 V
JESD-609 code e0 e3 e3
Maximum operating temperature 175 °C 150 °C 150 °C
Maximum output current 0.1 A 0.15 A 0.2 A
Maximum repetitive peak reverse voltage 70 V 100 V 100 V
Maximum reverse recovery time 0.006 µs 0.004 µs 0.004 µs
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin (Sn) Tin (Sn)
Base Number Matches 1 - 1
Is it lead-free? - Lead free Lead free
Maker - NXP NXP
Parts packaging code - SC-70 SC-88
package instruction - R-PDSO-G3 PLASTIC, SC-88, 6 PIN
Contacts - 3 6
ECCN code - EAR99 EAR99
Configuration - SERIES CONNECTED, CENTER TAP, 2 ELEMENTS 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials - SILICON SILICON
JESD-30 code - R-PDSO-G3 R-PDSO-G6
Humidity sensitivity level - 1 1
Number of components - 2 4
Number of terminals - 3 6
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Maximum power dissipation - 0.2 W 0.25 W
Certification status - Not Qualified Not Qualified
Maximum reverse current - 1 µA 50 µA
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - 30 30
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