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BAV99S

Description
0.15 A, 100 V, 4 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size125KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BAV99S Overview

0.15 A, 100 V, 4 ELEMENT, SILICON, SIGNAL DIODE

BAV99S Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-88
package instructionPLASTIC, SC-88, 6 PIN
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Configuration2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.715 V
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components4
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse current50 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage75 V
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
BAV99 series
High-speed switching diodes
Rev. 07 — 14 April 2010
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
BAV99
BAV99S
BAV99W
SOT23
SOT363
SOT323
JEITA
-
SC-88
SC-70
JEDEC
TO-236AB
-
-
dual series
quadruple; 2 series
dual series
Configuration
Package
configuration
small
very small
very small
Type number
1.2 Features and benefits
High switching speed: t
rr
4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: C
d
1.5 pF
Reverse voltage: V
R
100 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
V
R
= 80 V
Min
-
-
-
Typ
-
-
-
Max
0.5
100
4
Unit
μA
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.

BAV99S Related Products

BAV99S BAV99 BAV99W
Description 0.15 A, 100 V, 4 ELEMENT, SILICON, SIGNAL DIODE SIGNAL DIODE 0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? conform to incompatible conform to
Reach Compliance Code compliant unknow compli
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.715 V 1.3 V 1.25 V
JESD-609 code e3 e0 e3
Maximum operating temperature 150 °C 175 °C 150 °C
Maximum output current 0.2 A 0.1 A 0.15 A
Maximum repetitive peak reverse voltage 100 V 70 V 100 V
Maximum reverse recovery time 0.004 µs 0.006 µs 0.004 µs
surface mount YES YES YES
Terminal surface Tin (Sn) Tin/Lead (Sn/Pb) Tin (Sn)
Is it lead-free? Lead free - Lead free
Maker NXP - NXP
Parts packaging code SC-88 - SC-70
package instruction PLASTIC, SC-88, 6 PIN - R-PDSO-G3
Contacts 6 - 3
ECCN code EAR99 - EAR99
Configuration 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS - SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials SILICON - SILICON
JESD-30 code R-PDSO-G6 - R-PDSO-G3
Humidity sensitivity level 1 - 1
Number of components 4 - 2
Number of terminals 6 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260
Maximum power dissipation 0.25 W - 0.2 W
Certification status Not Qualified - Not Qualified
Maximum reverse current 50 µA - 1 µA
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature 30 - 30
Base Number Matches 1 1 -
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