BAV99 series
High-speed switching diodes
Rev. 07 — 14 April 2010
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
BAV99
BAV99S
BAV99W
SOT23
SOT363
SOT323
JEITA
-
SC-88
SC-70
JEDEC
TO-236AB
-
-
dual series
quadruple; 2 series
dual series
Configuration
Package
configuration
small
very small
very small
Type number
1.2 Features and benefits
High switching speed: t
rr
≤
4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: C
d
≤
1.5 pF
Reverse voltage: V
R
≤
100 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
V
R
= 80 V
Min
-
-
-
Typ
-
-
-
Max
0.5
100
4
Unit
μA
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
NXP Semiconductors
BAV99 series
High-speed switching diodes
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
1
2
006aaa144
Simplified outline
Graphic symbol
BAV99; BAV99W
3
3
1
2
006aaa763
BAV99S
1
2
3
4
5
6
anode (diode 1)
cathode (diode 2)
cathode (diode 3),
anode (diode 4)
anode (diode 3)
cathode (diode 4)
cathode (diode 1),
anode (diode 2)
1
2
3
1
2
3
006aab101
6
5
4
6
5
4
3. Ordering information
Table 4.
Ordering information
Package
Name
BAV99
BAV99S
BAV99W
-
SC-88
SC-70
Description
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
Version
SOT23
SOT363
SOT323
Type number
4. Marking
Table 5.
BAV99
BAV99S
BAV99W
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
A7*
K1*
A7*
Type number
BAV99_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 14 April 2010
2 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
repetitive peak reverse
voltage
reverse voltage
forward current
BAV99
BAV99S
BAV99W
I
FRM
I
FSM
repetitive peak forward
current
non-repetitive peak
forward current
square wave
t
p
= 1
μs
t
p
= 1 ms
t
p
= 1 s
P
tot
total power dissipation
BAV99
BAV99S
BAV99W
Per device
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
[1][4]
[3]
[1]
[2]
[1]
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
Max
100
100
215
125
200
150
130
500
Unit
V
V
mA
mA
mA
mA
mA
mA
-
-
-
-
[5]
4
1
0.5
250
250
200
150
+150
+150
A
A
A
mW
mW
mW
°C
°C
°C
T
amb
≤
25
°C
T
amb
≤
85
°C
T
amb
≤
25
°C
-
-
-
−65
−65
junction temperature
ambient temperature
storage temperature
Single diode loaded.
Double diode loaded.
T
j
= 25
°C
prior to surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Soldering points at pins 2, 3, 5 and 6.
BAV99_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 14 April 2010
3 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BAV99
BAV99W
R
th(j-sp)
thermal resistance from
junction to solder point
BAV99
BAV99S
BAV99W
[1]
[2]
[3]
Single diode loaded.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering points at pins 2, 3, 5 and 6.
[3]
Conditions
in free air
[1][2]
Min
Typ
Max
Unit
-
-
-
-
500
625
K/W
K/W
-
-
-
-
-
-
360
260
300
K/W
K/W
K/W
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 80 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
-
[1]
[2]
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
715
855
1
1.25
30
0.5
30
50
1.5
4
1.75
Unit
mV
mV
V
V
nA
μA
μA
μA
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0 V
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
BAV99_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 14 April 2010
4 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes
10
3
I
F
(mA)
10
2
006aab132
10
2
I
R
(μA)
10
1
10
−1
(1)
006aab133
(2)
10
10
−2
(1)
(2)
(3)
(4)
(3)
1
10
−3
10
−4
(4)
10
−1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(V)
10
−5
0
20
40
60
80
V
R
(V)
100
(1) T
amb
= 150
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
(1) T
amb
= 150
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
mbg446
Fig 2.
Reverse current as a function of reverse
voltage; typical values
mbg704
0.8
C
d
(pF)
0.6
10
2
I
FSM
(A)
10
0.4
1
0.2
0
0
4
8
12
V
R
(V)
16
10
−1
1
10
10
2
10
3
t
p
(μs)
10
4
f = 1 MHz; T
amb
= 25
°C
Based on square wave currents.
T
j
= 25
°C;
prior to surge
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
BAV99_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 14 April 2010
5 of 14
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