BZG03C...
Vishay Telefunken
Silicon Z–Diodes
Features
D
D
D
D
D
Glass passivated junction
High reliability
Voltage range 10V to 270V
Fits onto 5 mm SMD footpads
Wave and reflow solderable
Applications
Voltage stabilization
15 811
Order Instruction
Type
BZG03C10
Ordering Code
BZG03C10–TR
BZG03C10–TR3
Remarks
Tape and Reel (1.500 pcs)
Tape and Reel (6.000 pcs)
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Power dissipation
Non repetitive peak surge
power dissipation
Junction temperature
Storage temperature range
Test Conditions
R
thJA
<25K/W, T
amb
=100
°
C
R
thJA
<100K/W, T
amb
=50
°
C
t
p
=100
m
s sq.pulse,
T
j
=25
°
C prior to surge
Type
Symbol
P
V
P
V
P
ZSM
T
j
T
stg
Value
3
1.25
600
175
–65...+150
Unit
W
W
W
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction lead
Junction ambient
Test Conditions
mounted on epoxy–glass hard tissue, Fig. 1a
mounted on epoxy–glass hard tissue, Fig. 1b
mounted on Al–oxid–ceramic (Al
2
O
3
), Fig. 1b
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=0.5A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
Document Number 85593
Rev. 6, 09-Mar-01
www.vishay.com
1 (5)
BZG03C...
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
a)
b)
5.0
2.0
1.5
10.0
2.0
I
F
– Forward Current ( A )
3.0
2.5
2.0
1.5
1.0
0.5
25.0
94 9313
1.0
25.0
94 9581
0
0
0.5
1.0
1.5
2.0
V
F
– Forward Voltage ( V )
Figure 1. Boards for R
thJA
definition (copper overlay 35
m
)
P
ZSM
– Non-Repetitive Surge Power
Dissipation ( W )
Figure 4. Forward Current vs. Forward Voltage
10000
1000
2.6
100
2.4
2.2
7.0
2.4
94 9314
94 9582
10
0.01
0.1
1
10
100
t
p
– Pulse Length ( ms )
Figure 2. Recommended foot pads (in mm)
Figure 5. Non Repetitive Surge Power Dissipation vs.
Pulse Length
4
P
tot
– Total Power Dissipation ( W )
3
R
thJA
=25K/W
2
R
thJA
=100K/W
1
0
0
94 9580
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
Figure 3. Total Power Dissipation vs.
Ambient Temperature
Document Number 85593
Rev. 6, 09-Mar-01
www.vishay.com
3 (5)
BZG03C...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85593
Rev. 6, 09-Mar-01
www.vishay.com
5 (5)
Embedded System
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