PHOTO IC
Photo IC for laser beam synchronous detection
S10317 series
Low voltage operation (3.3 V)
S10317 series photo IC uses a high-speed PIN photodiode designed for laser beam synchronous detection. S10317 series is driven by a
low voltage (3.3 V) compatible with low voltage peripheral components that will be mounted on the same PC board. Two types of current
amplifiers are available with a gain of 6 times (S10317-01) and 20 times (S10317) that can be selected according to laser power to be
used. Tape-and-reel shipment is also available (S10317-30 and S10317-31).
Features
Applications
l
Low voltage operation (3.3 V)
l
High sensitivity
l
Print start timing detection for laser printers, digital copiers,
fax machines, etc.
Current amplifier gain: 20 times (S10317)
6 times (S10317-01)
l
Digital output
l
Small package
l
Suitable for lead-free solder reflow
l
Active area: 2.84 × 0.5 mm
s
Absolute maximum ratings (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Supply voltage
Vcc
1
Power dissipation *
P
2
Output voltage *
Vo
Output current
Io
Ro terminal current
I
RO
Operating temperature
Topr
Storage temperature
Tstg
*1: Power dissipation decreases at a rate of 4 mW/°C above Ta=25 °C.
*2: Vcc=+0.5 V or less
Value
-0.5 to +7
300
-0.5 to +7
5
3
-25 to +80
-40 to +85
Unit
V
mW
V
mA
mA
°C
°C
s
Electrical and optical characteristics (Ta=25 °C,
λ=780
nm, Vcc=3.3 V, Ro=5.1 kΩ, unless otherwise noted)
Parameter
Symbol
Condition
Current consumption
Icc
No input
High level output voltage
V
OH
I
OH
=4 mA
Low level output voltage
V
OL
I
OL
=4 mA *
3
S10317
Threshold input power
P
TH
S10317-01
S10317
H→L propagation
t
PHL
delay time
S10317-01
P
I
=57 µW (S10317)
S10317
L→H propagation
P
I
=186 µW (S10317-01)
t
PLH
Duty ratio 1:1
delay time
S10317-01
C
L
=15 pF *
4
Rise time
tr
Fall time
tf
Maximum input power
P
I
Max.
*3: Input power [P
I
]=57 µW (S10317), P
I
=186 µW (S10317-01)
100 %
INPUT LIGHT
INTENSITY
t
PHL
t
PLH
90 %
OUTPUT
1.5 V
10 %
tf
tr
KPICC0112EA
Min.
-
2.9
-
14
49.5
-
-
-
-
-
-
-
Typ.
0.7
-
-
19
62
130
100
200
150
3
4
-
Max.
1.5
-
0.3
24
74.5
250
200
300
250
7
7
P
TH
× 8
Unit
mA
V
V
µW
ns
ns
ns
µW
50 %
0%
PRELIMINARY DATA
Apr. 2007
1
Photo IC for laser beam synchronous detection
s
Block diagram
Vcc
Vref
0.1
µF
3.3 V
S10317 series
CURRENT
AMPLIFIER
PD
Vo
Ro
EXTERNAL
GAIN RESISTANCE
Ro
GND
KPICC0127EA
s
Function
S10317 series photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally
connected to the IC chip as shown in the block diagram. S10317 series should be used with terminal Ro connected to an external
gain resistance Ro.
A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and,
after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages V
RO
at terminal Ro is
given by the following expression.
V
RO
=A × S × P
I
× Ro [V] ·········· (1)
A: Current amplifier gain (S10317: 20 times, S10317-01: 6 times)
S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm)
P
I
: Input power [W]
Ro: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ
V
RO
is input to the internal comparator and compared with the internal reference voltage Vref (approx. 0.8 V) so the output Vo is
“High” when V
RO
< Vref or “Low” when V
RO
> Vref.
In equatin (1), set the Ro value so that V
RO
is 2 to 3 V.
(Monitoring V
RO
shows that it is limited to about 2 V (with respect to GND) by the voltage limiting circuit. Keep this in mind when
monitoring.)
s
Dimensional outline (unit: mm)
3.2 ± 0.2
(INCLUDING BURR)
0.66
CENTER OF
ACTIVE AREA
0.5
PHOTOSENSITIVE
SURFACE
3.4
MIRROR AREA
RANGE
0.80.80.8 0.8
4.2 ± 0.2
(9 ×) 0.4
(9 ×) 0.3
4.0 *
1.0 ± 0.4
3.0 *
0.15
1.0 ± 0.4
0.05
0.35
5.0 ± 0.3
0.45 ± 0.3
3.0 *
2.8
2.4
MIRROR AREA
RANGE
0.45 ± 0.3
PHOTOSENSITIVE
SURFACE
0.75
1.3
0.15
0.1 ± 0.1
Tolerance unless otherwise noted: ±0.1, ±2˚
Shaded area indicates burr.
Chip position accuracy with respect to the
package dimensions marked *
X, Y≤±0.2,
θ≤±2˚
Vcc
NC
OUT
GND
Ro
GND
GND
GND
GND
KPICA0070EB
2.9
3.0 *
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4.0 *
3.8
3.9
2.84
2
Cat. No. KPIC1067E01
Apr. 2007 DN
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