PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating).
Operated at Extended and Industrial Temperature Ranges.
Revision History
RevNo.
Rev. 0.0
Rev. 1.0
History
Initial release with Preliminary.
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics.
1.3 Changed I
SB1
to 20mA
2.1 Relax D.C parameters.
Item
I
CC
12ns
15ns
20ns
Previous
170mA
165mA
160mA
Current
195mA
190mA
185mA
Draft Data
Feb. 12. 1999
Mar. 29. 1999
Remark
Preliminary
Preliminary
Rev. 2.0
Aug. 19. 1999
Preliminary
2.2 Relax Absolute Maximum Rating.
Item
Voltage on Any Pin Relative to Vss
Rev. 3.0
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
I
CC
-
195mA
190mA
185mA
Previous
I
sb
70mA
I
sb1
20mA
I
CC
170mA
160mA
150mA
140mA
Current
I
sb
60mA
I
sb1
10mA
Previous
-0.5 to 7.0
Current
-0.5 to Vcc+0.5
Mar. 27. 2000
Final
10ns
12ns
15ns
20ns
3.3 Added Extended temperature range
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 3.0
March 2000
PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
512K x 8 Bit High-Speed CMOS Static RAM
FEATURES
• Fast Access Time 10,12,15,20ns(Max.)
• Low Power Dissipation
Standby (TTL)
: 60mA(Max.)
(CMOS) : 10mA(Max.)
Operating K6R4008C1C-10 : 170mA(Max.)
K6R4008C1C-12 : 160mA(Max.)
K6R4008C1C-15 : 150mA(Max.)
K6R4008C1C-20 : 140mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
K6R4008C1C-J : 36-SOJ-400
K6R4008C1C-T: 44-TSOP2-400BF
GENERAL DESCRIPTION
The K6R4008C1C is a 4,194,304-bit high-speed Static Ran-
dom Access Memory organized as 524,288 words by 8 bits.
The K6R4008C1C uses 8 common input and output lines and
has an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNG′s advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density
high-speed
system
applications.
The
K6R4008C1C is packaged in a 400 mil 36-pin plastic SOJ and
44-pin plastic TSOP type II.
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
I/O
1
~I/O
8
ORDERING INFORMATION
K6R4008C1C-C10/C12/C15/C20
Commercial Temp.
Extended Temp.
Industrial Temp.
K6R4008C1C-E10/E12/E15/E20
K6R4008C1C-I10/I12/I15/I20
Pre-Charge Circuit
Row Select
Memory Array
1024 Rows
512 x 8 Columns
Data
Cont.
CLK
Gen.
I/O Circuit
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
CS
WE
OE
-2-
Rev 3.0
March 2000
PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
PIN CONFIGURATION
(Top View)
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
I/O
2
Vcc
Vss
1
2
3
4
5
6
7
8
9
10
36 N.C
35 A
18
34 A
17
33 A
16
32 A
15
31
OE
N.C
N.C
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
1
2
3
4
5
6
7
8
9
44 N.C
43 N.C
42 N.C
41
40
39
38
37
A
18
A
17
A
16
A
15
OE
30 I/O
8
29 I/O
7
36 I/O
8
35 I/O
7
36-SOJ
I/O
2
10
Vcc 11
Vss 12
I/O
3
13
I/O
4
14
WE
A
5
A
6
A
7
A
8
A
9
15
16
17
18
19
20
28 Vss
27 Vcc
26 I/O
6
25 I/O
5
24 A
14
23 A
13
22 A
12
21 A
11
20 A
10
19 N.C
44-TSOP2
34 Vss
33 Vcc
32 I/O
6
31 I/O
5
30
29
28
27
26
A
14
A
13
A
12
A
11
A
10
I/O
3
11
I/O
4
12
WE
A
5
A
6
A
7
A
8
A
9
13
14
15
16
17
18
25 N.C
24 N.C
23 N.C
N.C 21
N.C 22
PIN FUNCTION
Pin Name
A
0
- A
18
WE
CS
OE
I/O
1
~ I/O
8
V
CC
V
SS
N.C
Pin Function
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+5.0V)
Ground
No Connection
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Extended
Industrial
Symbol
V
IN
, V
OUT
V
CC
P
D
T
STG
T
A
T
A
T
A
Rating
-0.5 to V
CC
+0.5
-0.5 to 7.0
1.0
-65 to 150
0 to 70
-25 to 85
-40 to 85
Unit
V
V
W
°C
°C
°C
°C
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
-3-
Rev 3.0
March 2000
PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS*
(T
A
=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.2
-0.5**
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+0.5***
0.8
Unit
V
V
V
V
* The above parameters are also guaranteed at extended and industrial temperature range.
** V
IL
(Min) = -2.0V a.c(Pulse Width
≤
8ns) for I
≤
20mA.
*** V
IH
(Max) = V
CC
+ 2.0V a.c (Pulse Width
≤
8ns) for I
≤
20mA.
DC AND OPERATING CHARACTERISTICS*
(T
A
=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Symbol
I
LI
I
LO
I
CC
V
IN
=V
SS
to V
CC
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to V
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
=V
IH
or V
IL,
I
OUT
=0mA
Com.
10ns
12ns
15ns
20ns
Ext.
Ind.
10ns
12ns
15ns
20ns
Standby Current
I
SB
I
SB1
Output Low Voltage Level
Output High Voltage Level
V
OL
V
OH
V
OH1**
Min. Cycle, CS=V
IH
f=0MHz, CS≥V
CC
-0.2V,
V
IN
≥V
CC
-0.2V or V
IN
≤0.2V
I
OL
=8mA
I
OH
=-4mA
I
OH1
=-0.1mA
Test Conditions
Min
-2
-2
-
-
-
-
-
-
-
-
-
-
-
2.4
-
Max
2
2
170
160
150
140
185
175
165
155
60
10
0.4
-
3.95
mA
mA
V
V
V
Unit
µA
µA
mA
* The above parameters are also guaranteed at extended and industrial temperature range.
** V
CC
=5.0V±5%, Temp.=25°C.
CAPACITANCE*
(T
A
=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
* Capacitance is sampled and not 100% tested.
Symbol
C
I/O
C
IN
Test Conditions
V
I/O
=0V
V
IN
=0V
MIN
-
-
Max
8
7
Unit
pF
pF
-4-
Rev 3.0
March 2000
PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
AC CHARACTERISTICS
(T
A
=0 to 70°C, V
CC
=5.0V±10%, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
* The above test conditions are also applied at extended and industrial temperature range.
Value
0V to 3V
3ns
1.5V
See below
Output Loads(A)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
R
L
= 50Ω
+5.0V
D
OUT
V
L
= 1.5V
Z
O
= 50Ω
30pF*
D
OUT
255Ω
480Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address
Chip Selection to Power Up Time
Chip Selection to Power Down-
Sym-
bol
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
PU
t
PD
K6R4008C1C-10
Min
10
-
-
-
3
0
0
0
3
0
-
Max
-
10
10
5
-
-
5
5
-
-
10
K6R4008C1C-12
Min
12
-
-
-
3
0
0
0
3
0
-
Max
-
12
12
6
-
-
6
6
-
-
12
K6R4008C1C-15
Min
15
-
-
-
3
0
0
0
3
0
-
Max
-
15
15
7
-
-
7
7
-
-
15
K6R4008C1C-20
Min
20
-
-
-
3
0
0
0
3
0
-
Max
-
20
20
9
-
-
9
9
-
-
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
* The above parameters are also guaranteed at extended and industrial temperature range.
-5-
Rev 3.0
March 2000
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