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MUN5312DW1T1

Description
PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363
CategoryDiscrete semiconductor    The transistor   
File Size1016KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MUN5312DW1T1 Overview

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363

MUN5312DW1T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)60
Number of components1
Polarity/channel typeNPN/PNP
Maximum power dissipation(Abs)0.15 W
surface mountYES
Transistor component materialsSILICON

MUN5312DW1T1 Related Products

MUN5312DW1T1 MUN5334DW1T1 MUN5315DW1T1 MUN5331DW1T1 MUN5311DW1T1
Description PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker NXP NXP NXP NXP NXP
Reach Compliance Code unknown unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 60 80 160 8 35
Number of components 1 1 1 1 1
Polarity/channel type NPN/PNP NPN/PNP NPN/PNP NPN/PNP NPN/PNP
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W
surface mount YES YES YES YES YES
Transistor component materials SILICON SILICON SILICON SILICON SILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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