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MT46V32M8P-6TLIT:C

Description
DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
Categorystorage    storage   
File Size2MB,93 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
Download Datasheet Parametric View All

MT46V32M8P-6TLIT:C Overview

DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66

MT46V32M8P-6TLIT:C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeTSOP
package instructionTSOP2, TSSOP66,.46
Contacts66
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
JESD-609 codee3
length22.22 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals66
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length2,4,8
Maximum standby current0.004 A
Maximum slew rate0.41 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width10.16 mm
256Mb: x4, x8, x16 DDR SDRAM
Features
Double Data Rate (DDR) SDRAM
MT46V64M4 – 16 Meg x 4 x 4 banks
MT46V32M8 – 8 Meg x 8 x 4 banks
MT46V16M16 – 4 Meg x 16 x 4 banks
Features
• V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
• V
DD
= +2.6V ±0.1V, V
DD
Q = +2.6V ±0.1V (DDR400)
• Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has two
– one per byte)
• Programmable burst lengths: 2, 4, or 8
• Auto Refresh and Self Refresh Modes
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2 compatible)
• Concurrent auto precharge option supported
t
RAS lockout supported (
t
RAP =
t
RCD)
For the most current data sheet, please refer to the Micron
®
Web site:
www.micron.com/datasheets
Options
• Configuration
64 Meg x 4 (16 Meg x 4 x 4 banks)
32 Meg x 8 (8 Meg x 8 x 4 banks)
16 Meg x 16 (4 Meg x 16 x 4 banks)
• Plastic Package – OCPL
66-pin TSOP
66-pin TSOP (lead-free)
• Plastic Package
60-Ball FBGA (8mm x 14mm)
60-Ball FBGA (8mm x 14mm) lead-free
• Timing – Cycle Time
5ns @ CL = 3 (DDR400B)
6ns @ CL = 2.5 (DDR333) FBGA only
6ns @ CL = 2.5 (DDR333) TSOP only
7.5ns @ CL = 2 (DDR266)
7.5ns @ CL = 2 (DDR266A)
7.5ns @ CL = 2.5 (DDR266B)
• Self Refresh
Standard
Low-Power Self Refresh
• Temperature Rating
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
• Revision
x4, x8
x16
32 Meg x 8
8 Meg x 8 x 4 banks
8K
8K (A0–A12)
4 (BA0,BA1)
1K (A0–A9)
Marking
64M4
32M8
16M16
TG
P
FG
BG
-5B
-6
-6T
-75E
-75Z
-75
None
L
None
IT
:G, :C
:C, :F
Table 1:
Configuration Addressing
64 Meg x 4
16 Meg x 4 x 4 banks
8K
8K (A0–A12)
4 (BA0,BA1)
2K (A0–A9,A11)
16 Meg x 16
4 Meg x 16 x 4 banks
8K
8K (A0–A12)
4 (BA0,BA1)
512 (A0–A8)
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
Table 2:
Key Timing Parameters
CL = CAS (READ) Latency; minimum clock rate @ CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and CL = 3 (-5B)
Clock Rate
Speed Grade
-5B
-6
6T
-75E/-75Z
-75
CL = 2
133 MHz
133 MHz
133 MHz
133 MHz
100 MHz
CL = 2.5
167 MHz
167 MHz
167 MHz
133 MHz
133 MHz
CL = 3
200 MHz
N/A
N/A
N/A
N/A
Data- Out Window
1.6ns
2.1ns
2.0ns
2.5ns
2.5ns
Access Window
±0.70ns
±0.70ns
±0.70ns
±0.75ns
±0.75ns
DQS–DQ Skew
+0.40ns
+0.40ns
+0.45ns
+0.50ns
+0.50ns
09005aef8076894f
256MBDDRx4x8x16_1.fm - Rev. K 5/05 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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