2N2497 datasheet, PDF - EEWORLD Datasheet

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2N2497: DescriptionSmall Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-5,; CategoryDiscrete semiconductor The transistor; File Size259KB，2 Pages; ManufacturerSolitron Devices Inc.

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2N2497 Overview

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-5,

2N2497 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	unknow
Configuration	SINGLE
Maximum drain-source on-resistance	1000 Ω
FET technology	JUNCTION
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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2N2497 Related Products

	2N2497	2N2498	2N2499	2N2500
Description	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-5,	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-5,	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-5,	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-5,
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknow	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION
JEDEC-95 code	TO-5	TO-5	TO-5	TO-5
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	0.5 W	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
Maximum drain-source on-resistance	1000 Ω	800 Ω	600 Ω	-

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