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DRA5C

Description
SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220
CategoryAnalog mixed-signal IC    Trigger device   
File Size100KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

DRA5C Overview

SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220

DRA5C Parametric

Parameter NameAttribute value
MakerON Semiconductor
Reach Compliance Codecompliant
Critical rise rate of minimum off-state voltage30 V/us
Maximum DC gate trigger current40 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current60 mA
Maximum leakage current2 mA
On-state non-repetitive peak current80 A
Maximum on-state voltage1.6 V
Maximum on-state current5000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage200 V
surface mountNO
Trigger device typeSCR

DRA5C Related Products

DRA5C DRA5E DRA5G DRA5B
Description SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220 SILICON CONTROLLED RECTIFIER,400V V(DRM),5A I(T),TO-220 SILICON CONTROLLED RECTIFIER,600V V(DRM),5A I(T),TO-220 SILICON CONTROLLED RECTIFIER,100V V(DRM),5A I(T),TO-220
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Reach Compliance Code compliant compliant compliant compliant
Critical rise rate of minimum off-state voltage 30 V/us 30 V/us 30 V/us 30 V/us
Maximum DC gate trigger current 40 mA 40 mA 40 mA 40 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V 1.5 V
Maximum holding current 60 mA 60 mA 60 mA 60 mA
Maximum leakage current 2 mA 2 mA 2 mA 2 mA
On-state non-repetitive peak current 80 A 80 A 80 A 80 A
Maximum on-state voltage 1.6 V 1.6 V 1.6 V 1.6 V
Maximum on-state current 5000 A 5000 A 5000 A 5000 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -30 °C -30 °C -40 °C
Off-state repetitive peak voltage 200 V 400 V 600 V 100 V
surface mount NO NO NO NO
Trigger device type SCR SCR SCR SCR
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