DRA5G datasheet, PDF - EEWORLD Datasheet

DRA5G: DescriptionSILICON CONTROLLED RECTIFIER,600V V(DRM),5A I(T),TO-220; CategoryAnalog mixed-signal IC Trigger device; File Size100KB，3 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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DRA5G Overview

SILICON CONTROLLED RECTIFIER,600V V(DRM),5A I(T),TO-220

Parameter Name	Attribute value
Maker	ON Semiconductor
package instruction	,
Reach Compliance Code	compliant
Critical rise rate of minimum off-state voltage	30 V/us
Maximum DC gate trigger current	40 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	60 mA
Maximum leakage current	2 mA
On-state non-repetitive peak current	80 A
Maximum on-state voltage	1.6 V
Maximum on-state current	5000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-30 °C
Off-state repetitive peak voltage	600 V
surface mount	NO
Trigger device type	SCR

	DRA5G	DRA5C	DRA5E	DRA5B
Description	SILICON CONTROLLED RECTIFIER,600V V(DRM),5A I(T),TO-220	SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220	SILICON CONTROLLED RECTIFIER,400V V(DRM),5A I(T),TO-220	SILICON CONTROLLED RECTIFIER,100V V(DRM),5A I(T),TO-220
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
Reach Compliance Code	compliant	compliant	compliant	compliant
Critical rise rate of minimum off-state voltage	30 V/us	30 V/us	30 V/us	30 V/us
Maximum DC gate trigger current	40 mA	40 mA	40 mA	40 mA
Maximum DC gate trigger voltage	1.5 V	1.5 V	1.5 V	1.5 V
Maximum holding current	60 mA	60 mA	60 mA	60 mA
Maximum leakage current	2 mA	2 mA	2 mA	2 mA
On-state non-repetitive peak current	80 A	80 A	80 A	80 A
Maximum on-state voltage	1.6 V	1.6 V	1.6 V	1.6 V
Maximum on-state current	5000 A	5000 A	5000 A	5000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-30 °C	-40 °C	-30 °C	-40 °C
Off-state repetitive peak voltage	600 V	200 V	400 V	100 V
surface mount	NO	NO	NO	NO
Trigger device type	SCR	SCR	SCR	SCR

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