SILICON CONTROLLED RECTIFIER,100V V(DRM),5A I(T),TO-220
| Parameter Name | Attribute value |
| Maker | ON Semiconductor |
| package instruction | , |
| Reach Compliance Code | compliant |
| Critical rise rate of minimum off-state voltage | 30 V/us |
| Maximum DC gate trigger current | 40 mA |
| Maximum DC gate trigger voltage | 1.5 V |
| Maximum holding current | 60 mA |
| Maximum leakage current | 2 mA |
| On-state non-repetitive peak current | 80 A |
| Maximum on-state voltage | 1.6 V |
| Maximum on-state current | 5000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Off-state repetitive peak voltage | 100 V |
| surface mount | NO |
| Trigger device type | SCR |
| DRA5B | DRA5C | DRA5E | DRA5G | |
|---|---|---|---|---|
| Description | SILICON CONTROLLED RECTIFIER,100V V(DRM),5A I(T),TO-220 | SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220 | SILICON CONTROLLED RECTIFIER,400V V(DRM),5A I(T),TO-220 | SILICON CONTROLLED RECTIFIER,600V V(DRM),5A I(T),TO-220 |
| Maker | ON Semiconductor | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| Critical rise rate of minimum off-state voltage | 30 V/us | 30 V/us | 30 V/us | 30 V/us |
| Maximum DC gate trigger current | 40 mA | 40 mA | 40 mA | 40 mA |
| Maximum DC gate trigger voltage | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
| Maximum holding current | 60 mA | 60 mA | 60 mA | 60 mA |
| Maximum leakage current | 2 mA | 2 mA | 2 mA | 2 mA |
| On-state non-repetitive peak current | 80 A | 80 A | 80 A | 80 A |
| Maximum on-state voltage | 1.6 V | 1.6 V | 1.6 V | 1.6 V |
| Maximum on-state current | 5000 A | 5000 A | 5000 A | 5000 A |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -40 °C | -40 °C | -30 °C | -30 °C |
| Off-state repetitive peak voltage | 100 V | 200 V | 400 V | 600 V |
| surface mount | NO | NO | NO | NO |
| Trigger device type | SCR | SCR | SCR | SCR |