Power Bipolar Transistor, 25A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
| Parameter Name | Attribute value |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 25 A |
| Collector-based maximum capacity | 450 pF |
| Collector-emitter maximum voltage | 150 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 12 |
| JEDEC-95 code | TO-204AA |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 200 W |
| Certification status | Not Qualified |
| Guideline | MIL |
| surface mount | NO |
| Terminal surface | NOT SPECIFIED |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 40 MHz |
| Maximum off time (toff) | 1250 ns |
| Maximum opening time (tons) | 500 ns |
| VCEsat-Max | 1.8 V |
| Base Number Matches | 1 |
| JANTX2N6341 | JANTXV2N6341 | JAN2N6341 | JANTX2N6338 | JAN2N6338 | JANTXV2N6338 | |
|---|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 25A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin | Power Bipolar Transistor, 25A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin | Power Bipolar Transistor, 25A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin | Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin | Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin | Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin |
| package instruction | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 25 A | 25 A | 25 A | 25 A | 25 A | 25 A |
| Collector-based maximum capacity | 450 pF | 450 pF | 450 pF | 450 pF | 450 pF | 450 pF |
| Collector-emitter maximum voltage | 150 V | 150 V | 150 V | 100 V | 100 V | 100 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 12 | 12 | 12 | 12 | 12 | 12 |
| JEDEC-95 code | TO-204AA | TO-204AA | TO-204AA | TO-204AA | TO-204AA | TO-204AA |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power consumption environment | 200 W | 200 W | 200 W | 200 W | 200 W | 200 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Guideline | MIL | MIL | MIL | MIL | MIL | MIL |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 40 MHz | 40 MHz | 40 MHz | 40 MHz | 40 MHz | 40 MHz |
| Maximum off time (toff) | 1250 ns | 1250 ns | 1250 ns | 1250 ns | 1250 ns | 1250 ns |
| Maximum opening time (tons) | 500 ns | 500 ns | 500 ns | 500 ns | 500 ns | 500 ns |
| VCEsat-Max | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| Terminal surface | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |