JAN2N6338 datasheet, PDF - EEWORLD Datasheet

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JAN2N6338: DescriptionPower Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size167KB，4 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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JAN2N6338 Overview

Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

JAN2N6338 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	25 A
Collector-based maximum capacity	450 pF
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	12
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	200 W
Certification status	Not Qualified
Guideline	MIL
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz
Maximum off time (toff)	1250 ns
Maximum opening time (tons)	500 ns
VCEsat-Max	1.8 V
Base Number Matches	1

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Description	Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin	Power Bipolar Transistor, 25A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin	Power Bipolar Transistor, 25A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin	Power Bipolar Transistor, 25A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin	Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin	Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	25 A	25 A	25 A	25 A	25 A	25 A
Collector-based maximum capacity	450 pF	450 pF	450 pF	450 pF	450 pF	450 pF
Collector-emitter maximum voltage	100 V	150 V	150 V	150 V	100 V	100 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	12	12	12	12	12	12
JEDEC-95 code	TO-204AA	TO-204AA	TO-204AA	TO-204AA	TO-204AA	TO-204AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power consumption environment	200 W	200 W	200 W	200 W	200 W	200 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	MIL	MIL	MIL	MIL	MIL	MIL
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	40 MHz	40 MHz	40 MHz	40 MHz	40 MHz	40 MHz
Maximum off time (toff)	1250 ns	1250 ns	1250 ns	1250 ns	1250 ns	1250 ns
Maximum opening time (tons)	500 ns	500 ns	500 ns	500 ns	500 ns	500 ns
VCEsat-Max	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Base Number Matches	1	1	1	1	1	-
Terminal surface	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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