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DDA114TK-13

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size89KB,6 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DDA114TK-13 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6

DDA114TK-13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerDiodes
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DDA (xxxx) K
PNP PRE-BIASED SMALL SIGNAL SOT-26
DUAL SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
Available in Lead Free/RoHS Compliant Version (Note 3)
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-26
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Copper leadframe). Please see Ordering
Information, Note 5, on Page 2
Marking: Date Code and Marking Code (See Diagrams &
Page 2)
Ordering Information (See Page 2)
Weight: 0.015 grams (approximate)
P/N
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA143TK
DDA114TK
R1
22KW
47KW
10KW
2.2KW
10KW
4.7KW
10KW
R2
22KW
47KW
47KW
47KW
10KW
-
-
MARKING
P17
P20
P14
P06
P13
P07
P12
K
J
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA143TK
DDA114TK
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA143TK
DDA114TK
All
Value
50
+10 to -40
+10 to -40
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
-30
-30
-70
-100
-50
-100
-100
-100
300
416.7
-55 to +150
Unit
V
Characteristic
Supply Voltage, (1) to (6) and (4) to (3)
Input Voltage, (2) to (1) and (5) to (4)
Output Current
Output Current
Power Dissipation (Total)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. 200mW per element must not be exceeded.
3. No purposefully added lead.
DS30349 Rev. 5 - 2
1 of 6
www.diodes.com
PXX YM
PXX YM
G
H
D
·
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available (DDC)
Built-In Biasing Resistors
A
SOT-26
Dim
B C
Min
0.35
1.50
2.70
Max
0.50
1.70
3.00
0.95
1.90
Typ
0.38
1.60
2.80
A
B
C
D
G
M
H
J
K
L
M
a
2.90
1.00
0.35
0.10
3.10
1.30
0.55
0.20
3.00
0.05
1.10
0.40
0.15
¾
0.013 0.10
L
All Dimensions in mm
6
5
R
1
R
2
R
2
R
1
4
6
5
R
1
R
1
4
1
2
R
1
, R
2
3
1
2
R
1
Only
3
SCHEMATIC DIAGRAM
V
IN
V
I
O
mA
I
C
(Max)
P
d
R
qJA
T
j
, T
STG
mA
mW
°C/W
°C
DDA (xxxx) K
ã
Diodes Incorporated

DDA114TK-13 Related Products

DDA114TK-13 DDA114TK-7 DDA114EK-13 DDA124EK-13 DDA143TK-13 DDA114YK-13
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6 Digital transistor 300mw 10kw Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6
Is it lead-free? Contains lead - Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible
Maker Diodes - Diodes Diodes Diodes Diodes
package instruction SMALL OUTLINE, R-PDSO-G6 - SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 - 6 6 6 6
Reach Compliance Code compliant - compliant compliant compliant compliant
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR - BUILT-IN BIAS RESISTOR RATIO 1 BUILT-IN BIAS RESISTOR RATIO 1 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO 4.7
Maximum collector current (IC) 0.1 A - 0.05 A 0.03 A 0.1 A 0.07 A
Collector-emitter maximum voltage 50 V - 50 V 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR - SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 - 30 56 100 68
JESD-30 code R-PDSO-G6 - R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
JESD-609 code e0 - e0 e0 e0 e0
Number of components 2 - 2 2 2 2
Number of terminals 6 - 6 6 6 6
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 - 235 235 235 235
Polarity/channel type PNP - PNP PNP PNP PNP
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES - YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL - DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 - 10 10 10 10
Transistor component materials SILICON - SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz - 250 MHz 250 MHz 250 MHz 250 MHz
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