CSB507F datasheet, PDF - EEWORLD Datasheet

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CSB507F: DescriptionPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size122KB，3 Pages; ManufacturerCDIL[Continental Device India Pvt. Ltd.]; Environmental Compliance

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CSB507F Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

CSB507F Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	CDIL[Continental Device India Pvt. Ltd.]
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	30 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	8 MHz

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Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

TO-220 Plastic Package

CSB507, CSD313

CSB507

CSD313

PNP PLASTIC POWER TRANSISTOR

NPN PLASTIC POWER TRANSISTOR

Low frequency Power Amplifier Applications

PIN CONFIGURATION

1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM

M IN.

14.42

9.63

3.56

M A X.

1 2 3

16.51

10.67

4.83

0.90

1.15

1.40

3.75

3.88

2.29

2.79

2.54

3.43

0.56

12.70 14.73

2.80

4.07

2.03

2.92

31.24

DE G 7

ABSOLUTE MAXIMUM RATINGS

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

Collector current

Total power dissipation up to T

= 25°C

Junction temperature

Collector-emitter saturation voltage

= 2A; I

= 0.2A

D.C. current gain

= 1A; V

= 2V

RATINGS

(at T

=25°C unless otherwise specified)

Limiting values

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

Emitter-base voltage (open collector)

All dim insions in m m .

CBO

CEO

tot

CEsat

max.

min

max.

3.0

150

°C

1.0 V

320

CBO

CEO

EBO

max.

60 V

5.0 V

Continental Device India Limited

Data Sheet

Page 1 of 3

CSB507F Related Products

	CSB507F	CSD313D	CSD313E	CSD313F	CSB507E	CSB507D
Description	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	SFM	SFM	SFM	SFM	SFM	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	TO-220, 3 PIN	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	3 A	3 A	3 A	3 A	3 A	3 A
Collector-emitter maximum voltage	60 V	60 V	60 V	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	60	100	160	100	60
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	NPN	NPN	NPN	PNP	PNP
Maximum power dissipation(Abs)	30 W	30 W	30 W	30 W	30 W	30 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8 MHz	8 MHz	8 MHz	8 MHz	8 MHz	8 MHz
Maker	CDIL[Continental Device India Pvt. Ltd.]	CDIL[Continental Device India Pvt. Ltd.]	-	-	CDIL[Continental Device India Pvt. Ltd.]	CDIL[Continental Device India Pvt. Ltd.]

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