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2N2780

Description
Power Bipolar Transistor, 30A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size89KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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2N2780 Overview

Power Bipolar Transistor, 30A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN

2N2780 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1439169792
Parts packaging codeTO-63
package instructionPOST/STUD MOUNT, O-MUPM-X3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)30 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-63
JESD-30 codeO-MUPM-X3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
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