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AS4DDR32M72PBG-75/IT

Description
DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
Categorystorage    storage   
File Size225KB,19 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric Compare View All

AS4DDR32M72PBG-75/IT Overview

DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219

AS4DDR32M72PBG-75/IT Parametric

Parameter NameAttribute value
MakerMicross
Parts packaging codeBGA
package instructionBGA,
Contacts219
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B219
memory density2415919104 bit
Memory IC TypeDDR DRAM
memory width72
Number of functions1
Number of ports1
Number of terminals219
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32MX72
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
i PEM
2.4Gb
2.4Gb SDRAM-DDR
Austin Semiconductor, Inc.
AS4DDR32M72PBG
32Mx72 DDR SDRAM
iNTEGRATED Plastic Encapsulated Microcircuit
FEATURES
DDR SDRAM Data Rate = 200, 250, 266, 333Mbps
Package:
219 Plastic Ball Grid Array (PBGA), 32 x 25mm
2.5V ±0.2V core power supply
2.5V I/O (SSTL_2 compatible)
Differential clock inputs (CLK and CLK#)
Commands entered on each positive CLK edge
Internal pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
Programmable Burst length: 2,4 or 8
Bidirectional data strobe (DQS) transmitted/received
with data, i.e., source-synchronous data capture
(one per byte)
DQS edge-aligned with data for READs; center-aligned
with data for WRITEs
DLL to align DQ and DQS transitions with CLK
Four internal banks for concurrent operation
Two data mask (DM) pins for masking write data
Programmable IOL/IOH option
Auto precharge option
Auto Refresh and Self Refresh Modes
Industrial, Enhanced and Military Temperature
Ranges
Organized as 32M x 72/80
Weight: AS4DDR32M72PBG </= 3.10 grams typical
* This product and or it’s specifications is subject to change without notice.
BENEFITS
40% SPACE SAVINGS
Reduced part count
Reduced I/O count
34% I/O Reduction
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Laminate interposer for optimum TCE match
Monolithic Solution
O
P
T
I
O
N
S
11.9
11.9
11.9
11.9
11.9
Integrated MCP Solution
S
A
V
I
N
G
S
22.3
25
32
Area
I/O
Count
5 x 265mm2 = 1328mm2 Plus
5 x 66 pins = 320 pins
800mm2
219 Balls
40+%
34 %
AS4DDR32M72PBG
Rev. 1.0 09/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1

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Description DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 DDR DRAM, 32MX72, 0.7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
Parts packaging code BGA BGA BGA BGA BGA BGA BGA BGA BGA BGA
package instruction BGA, BGA, BGA, BGA, BGA, BGA, BGA, BGA, BGA, BGA,
Contacts 219 219 219 219 219 219 219 219 219 219
Reach Compliance Code compliant unknown compliant unknown compliant compliant unknown unknown compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 0.75 ns 0.8 ns 0.8 ns 0.75 ns 0.8 ns 0.8 ns 0.8 ns 0.8 ns 0.7 ns 0.75 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219
memory density 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit 2415919104 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 72 72 72 72 72 72 72 72 72 72
Number of functions 1 1 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1 1 1
Number of terminals 219 219 219 219 219 219 219 219 219 219
word count 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words
character code 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
organize 32MX72 32MX72 32MX72 32MX72 32MX72 32MX72 32MX72 32MX72 32MX72 32MX72
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code BGA BGA BGA BGA BGA BGA BGA BGA BGA BGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
self refresh YES YES YES YES YES YES YES YES YES YES
Maximum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Minimum supply voltage (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
surface mount YES YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maker Micross Micross - - Micross Micross Micross Micross Micross Micross
Maximum operating temperature 85 °C - 85 °C 125 °C - 125 °C 85 °C 125 °C 85 °C -
Minimum operating temperature -40 °C - -40 °C -55 °C - -55 °C -40 °C -55 °C -40 °C -
Temperature level INDUSTRIAL - INDUSTRIAL MILITARY - MILITARY INDUSTRIAL MILITARY INDUSTRIAL -
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