AS4DDR32M72PBG-75/ET datasheet, PDF

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AS4DDR32M72PBG-75/ET: DescriptionDDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219; Categorystorage storage; File Size225KB，19 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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AS4DDR32M72PBG-75/ET Overview

DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219

AS4DDR32M72PBG-75/ET Parametric

Parameter Name	Attribute value
Maker	Micross
Parts packaging code	BGA
package instruction	BGA,
Contacts	219
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B219
memory density	2415919104 bit
Memory IC Type	DDR DRAM
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	219
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
organize	32MX72
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM

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i PEM

2.4Gb

2.4Gb SDRAM-DDR

Austin Semiconductor, Inc.

AS4DDR32M72PBG

32Mx72 DDR SDRAM

iNTEGRATED Plastic Encapsulated Microcircuit

FEATURES

DDR SDRAM Data Rate = 200, 250, 266, 333Mbps

Package:

•

219 Plastic Ball Grid Array (PBGA), 32 x 25mm

2.5V ±0.2V core power supply

2.5V I/O (SSTL_2 compatible)

Differential clock inputs (CLK and CLK#)

Commands entered on each positive CLK edge

Internal pipelined double-data-rate (DDR)

architecture; two data accesses per clock cycle

Programmable Burst length: 2,4 or 8

Bidirectional data strobe (DQS) transmitted/received

with data, i.e., source-synchronous data capture

(one per byte)

DQS edge-aligned with data for READs; center-aligned

with data for WRITEs

DLL to align DQ and DQS transitions with CLK

Four internal banks for concurrent operation

Two data mask (DM) pins for masking write data

Programmable IOL/IOH option

Auto precharge option

Auto Refresh and Self Refresh Modes

Industrial, Enhanced and Military Temperature

Ranges

Organized as 32M x 72/80

Weight: AS4DDR32M72PBG </= 3.10 grams typical

* This product and or it’s specifications is subject to change without notice.

BENEFITS

40% SPACE SAVINGS

Reduced part count

Reduced I/O count

•

34% I/O Reduction

Reduced trace lengths for lower parasitic

capacitance

Suitable for hi-reliability applications

Laminate interposer for optimum TCE match

Monolithic Solution

11.9

Integrated MCP Solution

22.3

Area

I/O

Count

5 x 265mm2 = 1328mm2 Plus

5 x 66 pins = 320 pins

800mm2

219 Balls

40+%

34 %

AS4DDR32M72PBG

Rev. 1.0 09/06

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS4DDR32M72PBG-75/ET Related Products

	AS4DDR32M72PBG-75/ET	AS4DDR32M72PBG-8/ET	AS4DDR32M72PBG-10/IT	AS4DDR32M72PBG-75/XT	AS4DDR32M72PBG-75/IT	AS4DDR32M72PBG-10/ET	AS4DDR32M72PBG-8/XT	AS4DDR32M72PBG-8/IT	AS4DDR32M72PBG-10/XT	AS4DDR32M72PBG-6/IT
Description	DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.75ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	DDR DRAM, 32MX72, 0.7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	BGA,	BGA,	BGA,	BGA,	BGA,	BGA,	BGA,	BGA,	BGA,	BGA,
Contacts	219	219	219	219	219	219	219	219	219	219
Reach Compliance Code	compliant	unknown	compliant	unknown	compliant	compliant	compliant	unknown	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.75 ns	0.8 ns	0.8 ns	0.75 ns	0.75 ns	0.8 ns	0.8 ns	0.8 ns	0.8 ns	0.7 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219	R-PBGA-B219
memory density	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	72	72	72	72	72	72	72	72	72	72
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	219	219	219	219	219	219	219	219	219	219
word count	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
organize	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72	32MX72
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maker	Micross	Micross	-	-	Micross	Micross	Micross	Micross	Micross	Micross
Maximum operating temperature	-	-	85 °C	125 °C	85 °C	-	125 °C	85 °C	125 °C	85 °C
Minimum operating temperature	-	-	-40 °C	-55 °C	-40 °C	-	-55 °C	-40 °C	-55 °C	-40 °C
Temperature level	-	-	INDUSTRIAL	MILITARY	INDUSTRIAL	-	MILITARY	INDUSTRIAL	MILITARY	INDUSTRIAL

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