Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3577
DESCRIPTION
・With
TO-3PFa package
・High
breakdown voltage
・High
speed
APPLICATIONS
・For
high speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
固电
Collector-base voltage
导½
半
PARAMETER
HA
INC
Collector current
Base current
Collector-emitter voltage
Emitter-base voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
CT
NDU
O
VALUE
850
650
7
5
10
3
UNIT
V
V
V
A
A
A
Open collector
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
80
W
3
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3577
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.5A;L=50mH
I
C
=3A ;I
B
=0.6A
I
C
=3A ;I
B
=0.6A
V
CB
=800V; V
BE
=0
V
EB
=7V; I
C
=0
I
C
=10mA ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
10
6
MIN
650
1.5
1.5
50
50
TYP.
MAX
UNIT
V
V
V
μA
μA
Switching times
t
on
t
stg
t
f
固电
Fall time
导½
半
ANG
CH
IN
Turn-on time
Storage time
MIC
E SE
I
C
=3A; V
CC
=250V
I
B1
=0.6A;I
B2
=-1.2A
DUC
ON
6
OR
T
1.0
2.5
0.5
MHz
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3577
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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