2N6379 datasheet, PDF - EEWORLD Datasheet

2N6379: DescriptionPower Bipolar Transistor, 50A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size102KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1439170537
Parts packaging code	TO-204AA
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	120 V
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON

	2N6379	2N6378	2N6377
Description	Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin	Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
Objectid	1439170537	8059220589	8059220588
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	50 A	50 A	50 A
Collector-emitter maximum voltage	120 V	100 V	80 V
Minimum DC current gain (hFE)	30	30	30
JEDEC-95 code	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of terminals	2	2	2
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP	PNP
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON

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