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2SA1380D

Description
TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126
CategoryDiscrete semiconductor    The transistor   
File Size42KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2SA1380D Overview

TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126

2SA1380D Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)1.2 W
surface mountNO
Base Number Matches1
Ordering number:ENN1425C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1380/2SC3502
Ultrahigh-Definition CRT Display,
Video Output Applications
Features
· High breakdown voltage : V
CEO
≥200V.
· Small reverse transfer capacitance and excellent
high-frequnecy characteristics
: C
re
=1.2pF (NPN), 1.7pF (PNP), V
CB
=30V.
· Adoption of FBET process
Package Dimensions
unit:mm
2009B
[2SA1380/2SC3502]
8.0
4.0
2.7
3.0
1.5
7.0
1.6
0.8
0.8
0.6
3.0
11.0
15.5
0.5
( ) : 2SA1380
2.4
4.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.2
1
2
3
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Ratings
(–)200
(–)200
(–)5
(–)100
(–)200
1.2
Unit
V
V
V
mA
mA
W
W
Tc=25˚C
5
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
D
60 to 120
E
100 to 200
VCB=(–)150V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
F
160 to 320
40*
150
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
320*
MHz
Unit
µA
µA
* : The 2SA1380/2SC3502 are classified by 10mA h
FE
as follows :
Rank
hFE
C
40 to 80
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502AS (KT)/71598HA (KT)/10996TS (KOTO) X-6422/3237KI/D134MW, TS No.1425-1/5

2SA1380D Related Products

2SA1380D 2SA1380C 2SA1380E 2SA1380F 2SC3502C
Description TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126 TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126 TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126 TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126 TRANSISTOR,BJT,NPN,200V V(BR)CEO,100MA I(C),TO-126
Reach Compliance Code compli compli compli compli compli
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single Single
Minimum DC current gain (hFE) 60 40 100 160 40
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP NPN
Maximum power dissipation(Abs) 1.2 W 1.2 W 1.2 W 1.2 W 1.2 W
surface mount NO NO NO NO NO
Base Number Matches 1 1 1 1 1
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