2SA1380E datasheet, PDF - EEWORLD Datasheet

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2SA1380E: DescriptionTRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126; CategoryDiscrete semiconductor The transistor; File Size42KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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2SA1380E Overview

TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126

2SA1380E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	compli
Factory Lead Time	1 week
Maximum collector current (IC)	0.1 A
Configuration	Single
Minimum DC current gain (hFE)	100
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1.2 W
surface mount	NO
Terminal surface	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Base Number Matches	1

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Ordering number:ENN1425C

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1380/2SC3502

Ultrahigh-Definition CRT Display,

Video Output Applications

Features

· High breakdown voltage : V

CEO

≥200V.

· Small reverse transfer capacitance and excellent

high-frequnecy characteristics

: C

=1.2pF (NPN), 1.7pF (PNP), V

=30V.

· Adoption of FBET process

Package Dimensions

unit:mm

2009B

[2SA1380/2SC3502]

8.0

4.0

2.7

3.0

1.5

7.0

1.6

0.8

0.6

3.0

11.0

15.5

0.5

( ) : 2SA1380

2.4

4.8

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

Conditions

1.2

1 : Emitter

2 : Collector

3 : Base

SANYO : TO-126

Ratings

(–)200

(–)5

(–)100

(–)200

1.2

Unit

Tc=25˚C

150

–55 to +150

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Symbol

ICBO

IEBO

hFE

60 to 120

100 to 200

VCB=(–)150V, IE=0

VEB=(–)4V, IC=0

VCE=(–)10V, IC=(–)10mA

VCE=(–)30V, IC=(–)10mA

160 to 320

40*

150

Conditions

Ratings

min

typ

max

(–)0.1

320*

MHz

Unit

µA

* : The 2SA1380/2SC3502 are classified by 10mA h

as follows :

Rank

hFE

40 to 80

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92502AS (KT)/71598HA (KT)/10996TS (KOTO) X-6422/3237KI/D134MW, TS No.1425-1/5

2SA1380/2SC3502

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of September, 2002. Specifications and information herein are

subject to change without notice.

PS No.1425-5/5

2SA1380E Related Products

	2SA1380E	2SA1380C	2SA1380D	2SA1380F	2SC3502C
Description	TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126	TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126	TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126	TRANSISTOR,BJT,PNP,200V V(BR)CEO,100MA I(C),TO-126	TRANSISTOR,BJT,NPN,200V V(BR)CEO,100MA I(C),TO-126
Reach Compliance Code	compli	compli	compli	compli	compli
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Configuration	Single	Single	Single	Single	Single
Minimum DC current gain (hFE)	100	40	60	160	40
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP	PNP	NPN
Maximum power dissipation(Abs)	1.2 W	1.2 W	1.2 W	1.2 W	1.2 W
surface mount	NO	NO	NO	NO	NO
Base Number Matches	1	1	1	1	1

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