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2N4387

Description
Power Bipolar Transistor, 2A I(C), 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size1MB,21 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric View All

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Power Bipolar Transistor, 2A I(C), 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin,

2N4387 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-66
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment20 W
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)25 MHz
Base Number Matches1

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Index Files: 381  1985  2720  1337  2036  8  40  55  27  41 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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