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2SA1721-R

Description
TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size230KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA1721-R Overview

TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

2SA1721-R Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)55 MHz
VCEsat-Max0.5 V
Base Number Matches1
2SA1721
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1721
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: V
CBO
=
−300
V, V
CEO
=
−300
V
Low saturation voltage: V
CE (sat)
=
−0.5
V (max)
Small collector output capacitance: C
ob
= 5.5 pF (typ.)
Complementary to 2SC4497
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−300
−300
−5
−100
−20
150
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1988-09
1
2014-03-01

2SA1721-R Related Products

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Description TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon TRANS PNP 300V 100MA TO236-3 Rated power: 150mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 300V Transistor type: PNP
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - -
Reach Compliance Code unknow unknow unknow unknow - -
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A - -
Collector-emitter maximum voltage 300 V 300 V 300 V 300 V - -
Configuration SINGLE SINGLE SINGLE SINGLE - -
Minimum DC current gain (hFE) 30 50 50 50 - -
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 - -
Number of components 1 1 1 1 - -
Number of terminals 3 3 3 3 - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - -
Polarity/channel type PNP PNP PNP PNP - -
surface mount YES YES YES YES - -
Terminal form GULL WING GULL WING GULL WING GULL WING - -
Terminal location DUAL DUAL DUAL DUAL - -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING - -
Transistor component materials SILICON SILICON SILICON SILICON - -
Nominal transition frequency (fT) 55 MHz 55 MHz 55 MHz 55 MHz - -
Base Number Matches 1 1 1 1 - -

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