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P2N2907A
Amplifier Transistor
PNP Silicon
Features
•
These are Pb--Free Devices*
MAXIMUM RATINGS
Rating
Collector--Emitter Voltage
Collector--Base Voltage
Emitter--Base Voltage
Collector Current -- Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
--60
--60
--5.0
--600
625
5.0
1.5
12
--55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO-
-92
CASE 29
STYLE 17
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COLLECTOR
1
2
BASE
3
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
θJA
R
θJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
12
1
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
P2N2
907A
AYWW
G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
P2N2907AG
P2N2907ARL1G
Package
TO--92
(Pb--Free)
TO--92
(Pb--Free)
Shipping
†
5000 Units / Bulk
2000 / Tape & Reel
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
P2N2907A/D
April, 2007 - Rev. 6
-
1
P2N2907A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage (Note 1)
(I
C
= --10 mAdc, I
B
= 0)
Collector--Base Breakdown Voltage
(I
C
= --10
mAdc,
I
E
= 0)
Emitter--Base Breakdown Voltage
(I
E
= --10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= --30 Vdc, V
EB(off)
= --0.5 Vdc)
Collector Cutoff Current
(V
CB
= --50 Vdc, I
E
= 0)
(V
CB
= --50 Vdc, I
E
= 0, T
A
= 150°C)
Emitter Cutoff Current
(V
EB
= --3.0 Vdc)
Collector Cutoff Current
(V
CE
= --10 V)
Base Cutoff Current
(V
CE
= --30 Vdc, V
EB(off)
= --0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
(I
C
= --0.1 mAdc, V
CE
= --10 Vdc)
(I
C
= --1.0 mAdc, V
CE
= --10 Vdc)
(I
C
= --10 mAdc, V
CE
= --10 Vdc)
(I
C
= --150 mAdc, V
CE
= --10 Vdc) (Note 1)
(I
C
= --500 mAdc, V
CE
= --10 Vdc) (Note 1)
Collector--Emitter Saturation Voltage (Note 1)
(I
C
= --150 mAdc, I
B
= --15 mAdc)
(I
C
= --500 mAdc, I
B
= --50 mAdc)
Base--Emitter Saturation Voltage (Note 1)
(I
C
= --150 mAdc, I
B
= --15 mAdc)
(I
C
= --500 mAdc, I
B
= --50 mAdc)
SMALL-
-SIGNAL CHARACTERISTICS
Current--Gain -- Bandwidth Product (Notes 1 and 2)
(I
C
= --50 mAdc, V
CE
= --20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= --10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= --2.0 Vdc, I
C
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn--On Time
Delay Time
Rise Time
Turn--Off Time
Storage Time
Fall Time
(V
CC
= --6.0 Vdc, I
C
= --150 mAdc,
I
B1
= I
B2
= --15 mAdc) (Figure 2)
(V
CC
= --30 Vdc, I
C
= --150 mAdc,
I
B1
= --15 mAdc) (Figures 1 and 5)
t
on
t
d
t
r
t
off
t
s
t
f
--
--
--
--
--
--
50
10
40
110
80
30
ns
ns
ns
ns
ns
ns
f
T
C
obo
C
ibo
200
--
--
--
8.0
30
MHz
pF
pF
h
FE
75
100
100
100
50
--
--
--
--
--
--
--
300
--
--0.4
--1.6
--1.3
--2.6
--
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
--60
--60
--5.0
--
--
--
--
--
--
--
--
--
--50
--0.01
--10
--10
--10
--50
Vdc
Vdc
Vdc
nAdc
mAdc
Symbol
Min
Max
Unit
I
EBO
I
CEO
I
BEX
nAdc
nAdc
nAdc
V
CE(sat)
Vdc
V
BE(sat)
Vdc
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
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2
P2N2907A
INPUT
Z
o
= 50
Ω
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
--16 V
200 ns
50
1.0 k
--30 V
200
INPUT
Z
o
= 50
Ω
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
--30 V
200 ns
+15 V
--6.0 V
37
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
1N916
1.0 k
1.0 k
50
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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3
P2N2907A
TYPICAL CHARACTERISTICS
3.0
hFE , NORMALIZED CURRENT GAIN
2.0
V
CE
= --1.0 V
V
CE
= --10 V
T
J
= 125°C
25°C
1.0
0.7
0.5
0.3
0.2
--0.1
--0.2 --0.3
--0.5 --0.7 --1.0
--2.0
--3.0
--5.0 --7.0
--10
--20
--30
--50 --70 --100
--200 --300 --500
--55°C
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
VCE, COLLECTOR--EMITTER VOLTAGE (VOLTS)
--1.0
--0.8
--0.6
--0.4
--0.2
0
--0.005
I
C
= --1.0 mA
--10 mA
--100 mA
--500 mA
--0.01
--0.02 --0.03 --0.05 --0.07 --0.1
--0.2
--0.3
--0.5 --0.7 --1.0
--2.0
--3.0
--5.0 --7.0 --10
--20
--30
--50
I
B
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
300
200
100
70
50
30
20
10
7.0
5.0
3.0
--5.0 --7.0 --10
--20 --30
--50 --70 --100
I
C
, COLLECTOR CURRENT
t
d
@ V
BE(off)
= 0 V
t
r
500
V
CC
= --30 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
300
200
100
70
50
30
20
2.0 V
--200 --300 --500
10
7.0
5.0
--5.0 --7.0 --10
t′
s
= t
s
-- 1/8 t
f
t
f
V
CC
= --30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
--20 --30
--50 --70 --100
--200 --300 --500
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn-
-On Time
Figure 6. Turn-
-Off Time
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4
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