PDTB113ZT
PNP 500 mA, 50 V resistor-equipped transistor;
R1 = 1 kΩ, R2 = 10 kΩ
Rev. 3 — 23 September 2010
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTD113ZT.
1.2 Features and benefits
500 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
±10
% resistor ratio tolerance
AEC-Q101 qualified
1.3 Applications
Digital application in automotive and
industrial segments
Control of IC inputs
Cost-saving alternative for BC807 series
in digital applications
Switching loads
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
0.7
9
Typ
-
-
1.0
10
Max
−50
−500
1.3
11
Unit
V
mA
kΩ
NXP Semiconductors
PDTB113ZT
PNP 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
input (base)
GND (emitter)
output (collector)
1
2
006aaa144
sym003
Simplified outline
3
Graphic symbol
3
R1
1
R2
2
3. Ordering information
Table 3.
Ordering information
Package
Name
PDTB113ZT
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
*7W
Type number
PDTB113ZT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
output current
-
-
-
+5
−10
−500
V
V
mA
Conditions
open emitter
open base
open collector
Min
-
-
-
Max
−50
−50
−5
Unit
V
V
V
PDTB113ZT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 23 September 2010
2 of 10
NXP Semiconductors
PDTB113ZT
PNP 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
T
stg
T
j
T
amb
[1]
Parameter
total power dissipation
storage temperature
junction temperature
ambient temperature
Conditions
T
amb
≤
25
°C
[1]
Min
-
−65
-
−65
Max
250
+150
150
+150
Unit
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
Parameter
collector-base
cut-off current
collector-emitter
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
V
CB
=
−10
V;
I
E
= i
e
= 0 A;
f = 100 MHz
Conditions
V
CB
=
−40
V; I
E
= 0 A
V
CB
=
−50
V; I
E
= 0 A
V
CE
=
−50
V; I
B
= 0 A
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V;
I
C
=
−50
mA
I
C
=
−50
mA;
I
B
=
−2.5
mA
V
CE
=
−5
V;
I
C
=
−100 μA
V
CE
=
−0.3
V;
I
C
=
−20
mA
Min
-
-
-
-
70
-
−0.3
−0.4
0.7
9
-
Typ
-
-
-
-
-
-
−0.6
−0.8
1.0
10
11
Max
−100
−100
−0.5
−0.8
-
−0.3
−1.0
−1.4
1.3
11
-
pF
V
V
V
kΩ
Unit
nA
nA
μA
mA
PDTB113ZT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 23 September 2010
3 of 10
NXP Semiconductors
PDTB113ZT
PNP 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
10
3
(1)
006aaa349
−10
−1
006aaa350
(1)
(2)
h
FE
(2)
(3)
V
CEsat
(V)
(3)
10
2
10
1
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
−10
−2
−1
−10
−10
2
I
C
(mA)
−10
3
V
CE
=
−5
V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1.
DC current gain as a function of collector
current; typical values
006aaa351
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa352
−10
−10
V
I(on)
(V)
(1)
(2)
V
I(off)
(V)
(1)
−1
(3)
−1
(2)
(3)
−10
−1
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
−10
−1
−10
−1
−1
I
C
(mA)
−10
V
CE
=
−0.3
V
(1) T
amb
=
−40 °C
(2) T
amb
= 25
°C
(3) T
amb
= 100
°C
V
CE
=
−5
V
(1) T
amb
=
−40 °C
(2) T
amb
= 25
°C
(3) T
amb
= 100
°C
Fig 3.
On-state input voltage as a function of
collector current; typical values
Fig 4.
Off-state input voltage as a function of
collector current; typical values
PDTB113ZT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 23 September 2010
4 of 10
NXP Semiconductors
PDTB113ZT
PNP 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
3
1.1
0.9
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
Dimensions in mm
0.48
0.38
0.15
0.09
04-11-04
Fig 5.
Package outline SOT23 (TO-236AB)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PDTB113ZT
[1]
Package
SOT23
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
-215
10000
-235
For further information and the availability of packing methods, see
Section 14.
PDTB113ZT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 23 September 2010
5 of 10
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