PZFJ110-TAPE-13 datasheet, PDF

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PZFJ110-TAPE-13: DescriptionTRANSISTOR 25 V, 18 ohm, N-CHANNEL, Si, POWER, JFET, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size65KB，4 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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PZFJ110-TAPE-13 Overview

TRANSISTOR 25 V, 18 ohm, N-CHANNEL, Si, POWER, JFET, FET General Purpose Power

PZFJ110-TAPE-13 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
Shell connection	GATE
Configuration	SINGLE
Minimum drain-source breakdown voltage	25 V
Maximum drain-source on-resistance	18 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	15 pF
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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PZFJ110-TAPE-13 Related Products

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Description	TRANSISTOR 25 V, 18 ohm, N-CHANNEL, Si, POWER, JFET, FET General Purpose Power	TRANSISTOR 25 V, 12 ohm, N-CHANNEL, Si, POWER, JFET, FET General Purpose Power	TRANSISTOR 25 V, 12 ohm, N-CHANNEL, Si, POWER, JFET, FET General Purpose Power	TRANSISTOR 25 V, 8 ohm, N-CHANNEL, Si, POWER, JFET, FET General Purpose Power	TRANSISTOR 25 V, 8 ohm, N-CHANNEL, Si, POWER, JFET, FET General Purpose Power	TRANSISTOR 25 V, 18 ohm, N-CHANNEL, Si, POWER, JFET, FET General Purpose Power
Maker	NXP	NXP	NXP	NXP	NXP	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Shell connection	GATE	GATE	GATE	GATE	GATE	GATE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	25 V	25 V	25 V	25 V	25 V	25 V
Maximum drain-source on-resistance	18 Ω	12 Ω	12 Ω	8 Ω	8 Ω	18 Ω
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	15 pF	15 pF	15 pF	15 pF	15 pF	15 pF
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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