DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZT2907A
PNP switching transistor
Product specification
Supersedes data of 1997 Jun 02
1999 Apr 14
Philips Semiconductors
Product specification
PNP switching transistor
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 60 V).
APPLICATIONS
•
Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT2222A.
handbook, halfpage
PZT2907A
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
4
2, 4
1
3
1
Top view
2
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−60
−60
−5
−600
−800
−200
1.15
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
1999 Apr 14
2
Philips Semiconductors
Product specification
PNP switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
PZT2907A
VALUE
106
25
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−50
V
I
E
= 0; V
CB
=
−50
V; T
amb
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−0.1
mA; V
CE
=
−10
V
I
C
=
−1
mA; V
CE
=
−10
V
I
C
=
−10
mA; V
CE
=
−10
V
I
C
=
−150
mA; V
CE
=
−10
V; note 1
I
C
=
−500
mA; V
CE
=
−10
V; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−2
V; f = 1 MHz
I
C
=
−50
mA; V
CE
=
−20
V;
f = 100 MHz; note 1
I
Con
=
−150
mA; I
Bon
=
−15
mA;
I
Boff
= 15 mA
−
−
−
75
100
100
100
50
−
−
−
−
−
−
200
MIN.
MAX.
−10
−10
−50
−
−
−
300
−
−400
−1.6
−1.3
−2.6
8
30
−
mV
V
V
V
pF
pF
MHz
UNIT
nA
µA
nA
Switching times (between 10% and 90% levels);
(see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
−
−
−
−
−
−
40
12
30
365
300
65
ns
ns
ns
ns
ns
ns
1999 Apr 14
3
Philips Semiconductors
Product specification
PNP switching transistor
PZT2907A
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
=
−9.5
V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
= 3.5 V; V
CC
=
−29.5
V.
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
1999 Apr 14
4
Philips Semiconductors
Product specification
PNP switching transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
PZT2907A
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28
1999 Apr 14
5
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