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2SA562TM-Y

Description
TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size316KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA562TM-Y Overview

TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal

2SA562TM-Y Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instruction2-5F1B, SC-43, 3 PIN
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
2SA562TM
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA562TM
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Excellent h
FE
linearity: h
FE (2)
= 25 (min)
at V
CE
=
−6
V, I
C
=
−400
mA
1 watt amplifier application.
Complementary to 2SC1959.
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−35
−30
−5
−500
−100
500
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
I
CBO
I
EBO
h
FE (1)
DC current gain
(Note)
h
FE (2)
(Note)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= −35
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −1
V, I
C
= −100
mA
V
CE
= −6
V, I
C
= −400
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −1
V, I
C
= −100
mA
V
CE
= −6
V, I
C
= −20
mA
V
CB
= −6
V, I
E
=
0, f
=
1 MHz
Min
70
Typ.
Max
−0.1
−0.1
240
Unit
μA
μA
25
−0.1
−0.8
200
13
−0.25
−1.0
V
V
MHz
pF
Note: h
FE (1)
classification O: 70~140, Y: 120~240
h
FE (2)
classification O: 25 (min), Y: 40 (min)
1
2007-11-01

2SA562TM-Y Related Products

2SA562TM-Y 2SA562TM-O
Description TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal
Parts packaging code TO-92 TO-92
package instruction 2-5F1B, SC-43, 3 PIN 2-5F1B, SC-43, 3 PIN
Contacts 3 3
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 30 V 30 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 25
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
Base Number Matches 1 1
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