2SC1809STP/N datasheet, PDF - EEWORLD Datasheet

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2SC1809STP/N: Description20mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size100KB，4 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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2SC1809STP/N Overview

20mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SC1809STP/N Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.02 A
Collector-based maximum capacity	1.4 pF
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	56
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	500 MHz
Base Number Matches	1

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2SC1809STP/N Related Products

	2SC1809STP/N	2SC1809STPP	2SC1809STP/P	2SC1809STPN	2SC1809STP	2SC1809STPM	2SC1809STP/M
Description	20mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR	Small Signal Bipolar Transistor, 0.02A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon	20mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR	Small Signal Bipolar Transistor, 0.02A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.02A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.02A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon	20mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V	20 V	20 V	20 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	56	82	82	56	82	39	39
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	500 MHz	500 MHz	500 MHz	500 MHz	500 MHz	500 MHz	500 MHz
Base Number Matches	1	1	1	1	1	1	1
ECCN code	-	EAR99	-	EAR99	EAR99	EAR99	-

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