Transistor
2SB1651
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
6.9±0.1
q
q
0.65 max.
1.0
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
Ratings
–55
–55
–5
Unit
V
V
V
1
2
3
0.45
–0.05
s
Absolute Maximum Ratings
(Ta=25˚C)
0.45
–0.05
+0.1
2.5±0.5
2.5±0.5
+0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
–200
–50
400
150
mA
mA
1:Emitter
2:Collector
3:Base
MT1 Type Package
Collector power dissipation
Junction temperature
Storage temperature
mW
˚C
˚C
T
stg
–55 ~ +150
s
Electrical Characteristics
Parameter
Collector cutoff current
(Ta=25˚C)
Symbol
nt
in
I
CBO
I
CEO
ue
Conditions
min
typ
2.5±0.1
max
14.5±0.5
0.85
3.5±0.1
0.8
q
Low noise voltage NV.
High foward current transfer ratio h
FE
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
ce
Emitter to base voltage
/D
Collector to emitter voltage
is
Collector to base voltage
V
CBO
V
CEO
V
EBO
h
FE*1
V
BE
NV
f
T
Forward current transfer ratio
ai
nt
Base to emitter voltage
en
Collector to emitter saturation voltage
V
CE(sat)
M
Transition frequency
Pl
e
Noise voltage
*1
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
Rank
h
FE
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
Unit
nA
µA
V
V
V
V
CB
= –10V, I
E
= 0
–100
–1
V
CE
= –10V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
–55
–55
–5
V
CE
= –5V, I
C
= –2mA
180
700
I
C
= –100mA, I
B
= –10mA
V
CE
= –1V, I
C
= –100mA
– 0.6
–1
V
V
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB,
V
CB
= –5V, I
E
= 2mA, f = 200MHz
R
g
= 100kΩ, Function = FLAT
110
150
mV
MHz
s
Features
an
co
0.15
0.7
4.0
1.05 2.5±0.1
(1.45)
±0.05
0.8
1
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Microcontroller MCU
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