EEWORLDEEWORLDEEWORLD

Part Number

Search

2N3563

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, High Frequency Band, Silicon, NPN, TO-106, TO-106, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size60KB,1 Pages
ManufacturerMicro Electronics
Websitehttp://www.microelectr.com.hk
Download Datasheet Parametric View All

2N3563 Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, High Frequency Band, Silicon, NPN, TO-106, TO-106, 4 PIN

2N3563 Parametric

Parameter NameAttribute value
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W4
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.7 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandHIGH FREQUENCY BAND
JEDEC-95 codeTO-106
JESD-30 codeO-MBCY-W4
Number of components1
Number of terminals4
Maximum operating temperature125 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)600 MHz
Base Number Matches1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 529  1483  323  413  615  11  30  7  9  13 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号