2SB1116-K-C datasheet, PDF - EEWORLD Datasheet

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2SB1116-K-C: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size70KB，1 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SB1116-K-C Overview

Small Signal Bipolar Transistor

2SB1116-K-C Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz
Base Number Matches	1

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2SB1116

Elektronische Bauelemente

-1A , -60V

PNP Plastic Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

High current surface mount PNP silicon switching transistor

for Load management in portable applications

A

L

3

SOT-23

3

Top View

CLASSIFICATION OF h

FE

Product-Rank

Range

2SB1116-L

135~270

2SB1116-K

200~400

2AB1116-U

300~600

F

K

C B

1

2

1

E

D

G

H

J

MARKING

1116

Collector

REF.

A

B

C

D

E

F

Millimeter

Min.

Max.

2.70

3.04

2.10

2.80

1.20

1.60

0.89

1.40

1.78

2.04

0.30

0.50

REF.

G

H

J

K

L

Millimeter

Min.

Max.

-

0.18

0.40

0.60

0.08

0.20

0.6 REF.

0.85

1.15

PACKAGE INFORMATION

Package

SOT-23

MPQ

3K

Leader Size

7 inch

1

Base

3

2

Emitter

MAXIMUM RATINGS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Ratings

-60

-50

-6

-1

350

150, -55~150

Unit

V

A

mW

°

C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base -emitter voltage

Transition frequency

Collector Output Capacitance

Turn-on time

Storage time

Fall time

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

BE

f

T

C

ob

t

ON

t

S

t

f

Min.

-60

-50

-6

-

135

81

-

-0.6

70

-

Typ.

-

25

0.07

0.7

0.07

Max.

-

-0.1

600

-

-0.3

-1.2

-0.7

-

Unit

V

µA

Test Conditions

I

C

= -100µA, I

E

=0

I

C

= -1mA, I

B

=0

I

E

= -100µA, I

C

=0

V

CB

= -60V, I

E

=0

V

EB

= -6V, I

C

=0

V

CE

= -2V, I

C

= -100mA

V

CE

= -2V, I

C

= -1A

I

C

= -1A, I

B

= -50mA

I

C

= -1A, I

B

= -50mA

V

CE

= -2V, I

C

= -50mA

V

CE

= -2V,I

C

= -100mA

V

CB

= -10V, I

E

=0, f=1MHz

V

CC

= -10V,I

C

= -100mA,

I

B1

=-I

B2

= -0.01A, V

BE(off)

=2~3V

V

MHz

pF

µS

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

27-Aug-2012 Rev. A

Page 1 of 1

2SB1116-K-C Related Products

	2SB1116-K-C	2SB1116-L-C	2SB1116-U	2SB1116-U-C	2SB1116-C
Description	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
Reach Compliance Code	compli	compli	compli	compli	compliant
Base Number Matches	1	1	1	1	1
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-	-	SMALL OUTLINE, R-PDSO-G3
Maximum collector current (IC)	1 A	1 A	-	-	1 A
Collector-emitter maximum voltage	50 V	50 V	-	-	50 V
Configuration	SINGLE	SINGLE	-	-	SINGLE
Minimum DC current gain (hFE)	200	135	-	-	81
JESD-30 code	R-PDSO-G3	R-PDSO-G3	-	-	R-PDSO-G3
Number of components	1	1	-	-	1
Number of terminals	3	3	-	-	3
Maximum operating temperature	150 °C	150 °C	-	-	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	-	SMALL OUTLINE
Polarity/channel type	PNP	PNP	-	-	PNP
surface mount	YES	YES	-	-	YES
Terminal form	GULL WING	GULL WING	-	-	GULL WING
Terminal location	DUAL	DUAL	-	-	DUAL
transistor applications	SWITCHING	SWITCHING	-	-	SWITCHING
Transistor component materials	SILICON	SILICON	-	-	SILICON
Nominal transition frequency (fT)	70 MHz	70 MHz	-	-	70 MHz

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