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2SB1116-U

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size70KB,1 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

2SB1116-U Overview

Small Signal Bipolar Transistor

2SB1116-U Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Base Number Matches1
2SB1116
Elektronische Bauelemente
-1A , -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High current surface mount PNP silicon switching transistor
for Load management in portable applications
A
L
3
SOT-23
3
Top View
CLASSIFICATION OF h
FE
Product-Rank
Range
2SB1116-L
135~270
2SB1116-K
200~400
2AB1116-U
300~600
F
K
C B
1
2
2
1
E
D
G
H
J
MARKING
1116
Collector
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7 inch
1
Base
3
2
Emitter
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-60
-50
-6
-1
350
150, -55~150
Unit
V
V
V
A
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base -emitter voltage
Transition frequency
Collector Output Capacitance
Turn-on time
Storage time
Fall time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
t
ON
t
S
t
f
Min.
-60
-50
-6
-
-
135
81
-
-
-0.6
70
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
25
0.07
0.7
0.07
Max.
-
-
-
-0.1
-0.1
600
-
-0.3
-1.2
-0.7
-
-
-
-
-
Unit
V
V
V
µA
µA
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -60V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
= -2V, I
C
= -100mA
V
CE
= -2V, I
C
= -1A
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
V
CE
= -2V, I
C
= -50mA
V
CE
= -2V,I
C
= -100mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CC
= -10V,I
C
= -100mA,
I
B1
=-I
B2
= -0.01A, V
BE(off)
=2~3V
V
V
V
MHz
pF
µS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Aug-2012 Rev. A
Page 1 of 1

2SB1116-U Related Products

2SB1116-U 2SB1116-K-C 2SB1116-L-C 2SB1116-U-C 2SB1116-C
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Reach Compliance Code compli compli compli compli compliant
Base Number Matches 1 1 1 1 1
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3
Maximum collector current (IC) - 1 A 1 A - 1 A
Collector-emitter maximum voltage - 50 V 50 V - 50 V
Configuration - SINGLE SINGLE - SINGLE
Minimum DC current gain (hFE) - 200 135 - 81
JESD-30 code - R-PDSO-G3 R-PDSO-G3 - R-PDSO-G3
Number of components - 1 1 - 1
Number of terminals - 3 3 - 3
Maximum operating temperature - 150 °C 150 °C - 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR - RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Polarity/channel type - PNP PNP - PNP
surface mount - YES YES - YES
Terminal form - GULL WING GULL WING - GULL WING
Terminal location - DUAL DUAL - DUAL
transistor applications - SWITCHING SWITCHING - SWITCHING
Transistor component materials - SILICON SILICON - SILICON
Nominal transition frequency (fT) - 70 MHz 70 MHz - 70 MHz
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