2SB1116
Elektronische Bauelemente
-1A , -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High current surface mount PNP silicon switching transistor
for Load management in portable applications
A
L
3
SOT-23
3
Top View
CLASSIFICATION OF h
FE
Product-Rank
Range
2SB1116-L
135~270
2SB1116-K
200~400
2AB1116-U
300~600
F
K
C B
1
2
2
1
E
D
G
H
J
MARKING
1116
Collector
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7 inch
1
Base
3
2
Emitter
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-60
-50
-6
-1
350
150, -55~150
Unit
V
V
V
A
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base -emitter voltage
Transition frequency
Collector Output Capacitance
Turn-on time
Storage time
Fall time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
t
ON
t
S
t
f
Min.
-60
-50
-6
-
-
135
81
-
-
-0.6
70
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
25
0.07
0.7
0.07
Max.
-
-
-
-0.1
-0.1
600
-
-0.3
-1.2
-0.7
-
-
-
-
-
Unit
V
V
V
µA
µA
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -60V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
= -2V, I
C
= -100mA
V
CE
= -2V, I
C
= -1A
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
V
CE
= -2V, I
C
= -50mA
V
CE
= -2V,I
C
= -100mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CC
= -10V,I
C
= -100mA,
I
B1
=-I
B2
= -0.01A, V
BE(off)
=2~3V
V
V
V
MHz
pF
µS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Aug-2012 Rev. A
Page 1 of 1
Embedded System
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