Ordering number : EN1786B
2SB1120
SANYO Semiconductors
DATA SHEET
2SB1120
Applications
•
PNP Epitaxial Planar Silicon Transistor
High-Current Driver Applications
Strobes, voltage regulators, relay drivers, lamp drivers.
Features
•
•
•
Low collector-to-emitter saturation voltage :VCE(sat)max= –0.45V.
Large current capacity : IC= –2.5A, ICP= –5A.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
✕0.8mm)
2
Conditions
Ratings
--20
--10
--7
--2.5
--5
500
1.3
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=-
-16V, IE=0A
VEB=--4V, IC=0A
Ratings
min
typ
max
--100
--100
Unit
nA
nA
Marking : BC
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
31010EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/2135MW, TS No.1786-1/4
2SB1120
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Symbol
hFE1
hFE2
fT
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
Conditions
VCE=-
-2V, IC=--500mA
VCE=-
-2V, IC=-
-3A
VCE=-
-10V, IC=--50mA
IC=-
-1.5A, IB=--0.15A
IC=-
-10μA, IE=0A
IC=-
-1mA, RBE=∞
IE=--10μA, IC=0A
VCB=-
-10V, f=1MHz
--20
--10
--7
70
Ratings
min
100*
70
250
-
-0.25
--0.45
MHz
V
V
V
V
pF
typ
max
560*
Unit
*:
The 2SB1120 is classified by 500mA hFE as follows:
Rank
E
F
hFE
100 to 200
160 to 320
G
280 to 560
Package Dimensions
unit : mm (typ)
7007B-004
Collector Current, IC -- A
--30mA
--3
Collector Current, IC -- A
--4
--80mA
--100mA
--150mA
0
--6
mA
--50mA
A
--40m
--100mA --60mA
--5
IC -- VCE
--5
IC -- VCE
0
--5
A
mA
--40m
--4
--3
--30mA
--25mA
--20mA
--15mA
--20mA
--15mA
--2
--2
--10mA
--1
--10mA
--5mA
--5mA
--2mA
IB=0mA
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1
--2mA
0
0
--1
--2
--3
--1mA
--4
IB=0mA
--5
--6
ITR08860
0
Collector-to-Emitter Voltage, VCE -- V
ITR08859
Collector-to-Emitter Voltage, VCE -- V
No.1786-2/4
2SB1120
--3.2
--2.8
IC -- VBE
VCE= --2V
1000
7
5
hFE -- IC
VCE= --2V
Collector Current, IC -- A
DC Current Gain, hFE
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
0
3
2
100
7
5
3
2
10
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
Base-to-Emitter Voltage, VBE -- V
1000
ITR08861
3
2
f T -- IC
Collector Current, IC -- A
5
--10
ITR08862
Cob -- VCB
VCB= --10V
f=1MHz
Gain-Brandwidth Product, f T -- MHz
7
5
Output Capacitance, Cob -- pF
3
2
100
7
5
100
7
5
3
--10
3
2
2
3
5
7 --100
2
3
5
Collector Current, IC -- A
--10000
7 --1000
ITR08863
10
--1.0
2
3
5
7
--10
2
3
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
--10
ITR08864
ASO
ICP=
--5A
s
1m
ms
10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
IC / IB=10
7
5
Collector Current, IC -- A
3
2
IC=
--2.5A
10
0m
s
--1000
5
3
2
--100
5
3
2
--10
5
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
--10
ITR08865
DC
--1.0
7
5
3
2
--0.1
7
5
3
op
era
tio
n
Ta=25°C
Single pulse
Mounted on a ceramic board (250mm
2
✕0.8mm)
5
7
--1.0
2
3
5
7
--10
2
3
Collector Current, IC -- A
1.6
1.4
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
ITR08867
Collector Dissipation, PC -- W
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
M
ou
nt
ed
on
ac
er
am
ic
bo
ar
d(
25
No h
eat s
ink
0m
m
2
✕
0
.8m
m
)
140
160
40
60
80
100
120
Ambient Temperature, Ta --
°C
ITR08866
No.1786-3/4
2SB1120
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.1786-4/4
Embedded System
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