2SB1120-F datasheet, PDF - EEWORLD Datasheet

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2SB1120-F: Description2500mA, 10V, PNP, Si, SMALL SIGNAL TRANSISTOR, PCP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size76KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SB1120-F Overview

2500mA, 10V, PNP, Si, SMALL SIGNAL TRANSISTOR, PCP, 3 PIN

2SB1120-F Parametric

Parameter Name	Attribute value
Objectid	1428957842
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	2.5 A
Collector-emitter maximum voltage	10 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power consumption environment	1.3 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.45 V

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Ordering number : EN1786B

2SB1120

SANYO Semiconductors

DATA SHEET

2SB1120

Applications

•

PNP Epitaxial Planar Silicon Transistor

High-Current Driver Applications

Strobes, voltage regulators, relay drivers, lamp drivers.

Features

•

Low collector-to-emitter saturation voltage :VCE(sat)max= –0.45V.

Large current capacity : IC= –2.5A, ICP= –5A.

Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

Mounted on a ceramic board (250mm

✕0.8mm)

Conditions

Ratings

--20

--10

--7

--2.5

--5

500

1.3

150

--55 to +150

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

Symbol

ICBO

IEBO

Conditions

VCB=-

-16V, IE=0A

VEB=--4V, IC=0A

Ratings

min

typ

max

--100

Unit

Marking : BC

Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer' s products or

equipment.

www.semiconductor-sanyo.com/network

31010EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/2135MW, TS No.1786-1/4

2SB1120

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or

malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise

to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt

safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not

limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,

without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be granted

with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third

party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s

intellectual property rights which has resulted from the use of the technical information and products mentioned

above.

This catalog provides information as of March, 2010. Specifications and information herein are subject

to change without notice.

PS No.1786-4/4

2SB1120-F Related Products

	2SB1120-F	2SB1120-E	2SB1120E	2SB1120F	2SB1120G	2SB1120-G
Description	2500mA, 10V, PNP, Si, SMALL SIGNAL TRANSISTOR, PCP, 3 PIN	Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN	Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN	Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN	Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN	Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN
Objectid	1428957842	1481159035	1481159035	1481159038	1481159041	1481159041
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	2.5 A	2.5 A	2.5 A	2.5 A	2.5 A	2.5 A
Collector-emitter maximum voltage	10 V	10 V	10 V	10 V	10 V	10 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	100	100	160	280	280
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum power dissipation(Abs)	-	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W

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