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2SB1120-G

Description
Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size76KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SB1120-G Overview

Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN

2SB1120-G Parametric

Parameter NameAttribute value
Objectid1481159041
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2.5 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)280
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Ordering number : EN1786B
2SB1120
SANYO Semiconductors
DATA SHEET
2SB1120
Applications
PNP Epitaxial Planar Silicon Transistor
High-Current Driver Applications
Strobes, voltage regulators, relay drivers, lamp drivers.
Features
Low collector-to-emitter saturation voltage :VCE(sat)max= –0.45V.
Large current capacity : IC= –2.5A, ICP= –5A.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
✕0.8mm)
2
Conditions
Ratings
--20
--10
--7
--2.5
--5
500
1.3
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=-
-16V, IE=0A
VEB=--4V, IC=0A
Ratings
min
typ
max
--100
--100
Unit
nA
nA
Marking : BC
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
31010EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/2135MW, TS No.1786-1/4

2SB1120-G Related Products

2SB1120-G 2SB1120-E 2SB1120E 2SB1120-F 2SB1120F 2SB1120G
Description Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN 2500mA, 10V, PNP, Si, SMALL SIGNAL TRANSISTOR, PCP, 3 PIN Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN Small Signal Bipolar Transistor, 2.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN
Objectid 1481159041 1481159035 1481159035 1428957842 1481159038 1481159041
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A
Collector-emitter maximum voltage 10 V 10 V 10 V 10 V 10 V 10 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 280 100 100 160 160 280
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99
Maximum power dissipation(Abs) 0.5 W 0.5 W 0.5 W - 0.5 W 0.5 W
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