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2SA1941-R(Q)

Description
TRANSISTOR,BJT,PNP,140V V(BR)CEO,10A I(C),TO-247VAR
CategoryDiscrete semiconductor    The transistor   
File Size157KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

2SA1941-R(Q) Overview

TRANSISTOR,BJT,PNP,140V V(BR)CEO,10A I(C),TO-247VAR

2SA1941-R(Q) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)55
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)100 W
surface mountNO
Base Number Matches1
2SA1941
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
Unit: mm
High breakdown voltage: V
CEO
=
−140
V (min)
Complementary to 2SC5198
Recommended for 70-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings
(T
a
= 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(T
c
= 25°C)
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−140
−140
−5
−10
−1
100
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
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