INCHANGE Semiconductor
isc
Product Specification
2SB679
isc
Silicon PNP Power Transistor
DESCRIPTION
·High
Power Dissipation-
: PC= 100W(Max.)@T
C
=25℃
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -120V(Min.)
·Complement
to Type 2SC1079
APPLICATIONS
·Designed
for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-120
V
V
CEO
Collector-Emitter Voltage
-120
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-12
A
I
E
Emitter Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
12
A
P
C
100
W
T
j
150
℃
T
stg
Storage Temperature
-65~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
2SB679
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -100mA ;I
B
= 0
-120
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -10mA ;I
C
= 0
-5
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -10A; I
B
= -1A
-3.0
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= -10A ; V
CE
= -5V
-2.5
V
I
CBO
Collector Cutoff Current
V
CB
= -50V; I
E
= 0
-0.1
mA
I
EBO
Emitter Cutoff Current
V
EB
= -5V; I
C
= 0
-0.1
mA
h
FE-1
DC Current Gain
I
C
= -2A ; V
CE
= -5V
40
140
h
FE-2
DC Current Gain
I
C
= -7A ; V
CE
= -5V
15
C
OB
Output Capacitance
V
CB
= -10V; f
test
= 1MHz
900
pF
f
T
Current-Gain—Bandwidth Product
I
C
= -2A ; V
CE
= -5V
6
MHz
h
FE-1
Classifications
R
40-80
Y
70-140
isc Website：www.iscsemi.cn
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