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2SB679

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size56KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB679 Overview

Transistor

2SB679 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
2SB679
isc
Silicon PNP Power Transistor
DESCRIPTION
·High
Power Dissipation-
: PC= 100W(Max.)@T
C
=25℃
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -120V(Min.)
·Complement
to Type 2SC1079
APPLICATIONS
·Designed
for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-120
V
V
CEO
Collector-Emitter Voltage
-120
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-12
A
I
E
Emitter Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
12
A
P
C
100
W
T
j
150
T
stg
Storage Temperature
-65~150
isc Website:www.iscsemi.cn

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Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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