2SA1579
Elektronische Bauelemente
-0.05A , -120V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Breakdown Voltage. (BV
CEO
= -120V)
Complementary of the 2SC4102
A
L
3
SOT-323
3
Top View
C B
1
2
2
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SA1579-R
180~390
RR
2SA1579-S
270~560
RS
1
K
E
D
F
G
H
J
REF.
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-120
-120
-5
-50
100
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut - off Current
Emitter Cut - off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
-120
-120
-5
-
-
180
-
-
-
Typ.
-
-
-
-
-
-
-
140
3.2
Max.
-
-
-
-0.5
-0.5
560
-0.5
-
-
Unit
V
V
V
A
A
Test Conditions
I
C
= -50A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -50A, I
C
=0
V
CB
= -100V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -6V, I
C
= -2mA
V
MHz
pF
I
C
= -10mA, I
B
= -1mA
V
CE
= -12V, I
C
= -2mA,
f= 30MHz
V
CB
= -12V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
26-Jan-2011 Rev. A
Page 1 of 2
2SA1579
Elektronische Bauelemente
-0.05A , -120V
PNP Silicon Plastic Encapsulated Transistor
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jan-2011 Rev. A
Page 2 of 2
Embedded System
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